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SIRA80DP-T1-RE3

Vishay Intertechnology

SIRA80DP-T1-RE3 by Vishay Intertechnology

Vishay Intertechnology's SIRA80DP-T1-RE3 is a N-channel FET with 30V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 500A max pulsed drain current and 0.00062 ohm max drain-source resistance. Suitable for high-power operations in small outline packages at temperatures ranging from -55 to 150°C.

Median Price

$1.369

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,220 parts In-Stock

1+ parts

$1.758

100+ parts

$0.944

1k+ parts

$0.806

10k+ parts

$0.753

1,220

$1.758

$0.944

$0.806

$0.753

Mouser Electronics

USA . 1,077 parts In-Stock

1+ parts

$3.040

100+ parts

$1.360

1k+ parts

$1.040

10k+ parts

$0.958

1,077

$3.040

$1.360

$1.040

$0.958

Verical

USA . 129,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.872

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129,000

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-

$0.872

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Element14

Singapore . 1,220 parts In-Stock

1+ parts

-

100+ parts

$0.980

1k+ parts

$0.818

10k+ parts

$0.759

1,220

-

$0.980

$0.818

$0.759

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.953

100+ parts

-

1k+ parts

-

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500

$0.953

-

-

-

Chip Stock

USA . 35,901 parts In-Stock

1+ parts

-

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35,901

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Vyrian

USA . 29,130 parts In-Stock

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29,130

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Cyclops Electronics Ltd

UK . 23,420 parts In-Stock

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23,420

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Component Sense

UK . 1,441 parts In-Stock

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1,441

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 28,906 parts In-Stock

1+ parts

$0.530

100+ parts

$0.517

1k+ parts

$0.514

10k+ parts

-

28,906

$0.530

$0.517

$0.514

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Ampacity Inc.

Singapore . 28,862 parts In-Stock

1+ parts

$0.530

100+ parts

-

1k+ parts

-

10k+ parts

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28,862

$0.530

-

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Aztec Data Supply Inc.

USA . 4,278 parts In-Stock

1+ parts

$0.540

100+ parts

-

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-

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4,278

$0.540

-

-

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Corohmni

South Africa . 47 parts In-Stock

1+ parts

$0.772

100+ parts

-

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10k+ parts

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47

$0.772

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.890

100+ parts

$0.845

1k+ parts

$0.845

10k+ parts

-

500

$0.890

$0.845

$0.845

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.934

100+ parts

-

1k+ parts

$0.897

10k+ parts

-

2,000

$0.934

-

$0.897

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Argo Parts USA

USA . 2,036 parts In-Stock

1+ parts

$0.953

100+ parts

-

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-

10k+ parts

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2,036

$0.953

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Continental Prestige Electronics

USA . 5,072 parts In-Stock

1+ parts

$1.470

100+ parts

$0.936

1k+ parts

$0.632

10k+ parts

-

5,072

$1.470

$0.936

$0.632

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Microchip USA

USA . 5,621 parts In-Stock

1+ parts

$4.727

100+ parts

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5,621

$4.727

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GreenTree Electronics

Israel . 60,000 parts In-Stock

1+ parts

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60,000

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QUARKTWIN TECHNOLOGY LTD

USA . 12,435 parts In-Stock

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12,435

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Futuretech Components

Singapore . 12,000 parts In-Stock

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12,000

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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12,000

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Overview

Unlock the power of efficient switching with the SIRA80DP-T1-RE3 by Vishay Intertechnology. Crafted with precision and quality, this N-channel power field effect transistor offers top-of-the-line performance for a variety of applications. With a single configuration and built-in diode, this transistor is a game-changer in enhancing mode operations. Experience seamless operation, maximum power dissipation, and unparalleled reliability with this high-performance transistor. Elevate your projects with Vishay Intertechnology's trusted technology and unleash the full potential of your applications.

Feature Benefit Bullets

Package Body Material:

The use of plastic/epoxy material makes the product lightweight and durable, ideal for various applications.

Polarity or Channel Type:

N-channel FETs are known for their high current and voltage capabilities, making this product suitable for switching applications.

Configuration:

The built-in diode simplifies circuit design and protects the transistor from voltage spikes, enhancing reliability.

Transistor Application:

Designed specifically for switching applications, ensuring efficient and reliable performance in power management systems.

Surface Mount:

Surface mount capability allows for easy and efficient assembly onto printed circuit boards, saving space and simplifying manufacturing processes.

Minimum DS Breakdown Voltage:

With a minimum breakdown voltage of 30V, this FET can handle higher voltage levels, providing versatility in different operating conditions.

Package Shape:

The rectangular package shape offers easy integration into circuit designs and efficient heat dissipation for improved performance.

Terminal Form:

Flat terminals ensure a secure connection and easy soldering, contributing to the overall reliability of the component.

Operating Mode:

Enhancement mode transistors offer high switching speed and efficiency, enhancing the overall performance of the circuit.

Maximum Pulsed Drain Current (IDM):

The high pulsed drain current rating makes this FET suitable for demanding applications where short bursts of high current are required.

Avalanche Energy Rating (EAS):

The high avalanche energy rating ensures the FET can withstand transient voltage spikes without failing, increasing system robustness.

Maximum Drain Current (Abs) (ID):

The high maximum drain current rating provides ample current-handling capability, making this FET suitable for high-power applications.

No. of Terminals:

The five terminals offer flexibility in circuit connections and enable advanced functionality in power management systems.

Maximum Power Dissipation (Abs):

With a high maximum power dissipation rating, this FET can handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter):

The small outline package style conserves space on the PCB, making it ideal for compact electronic devices with limited space.

Field Effect Transistor Technology:

Metal-oxide semiconductor technology ensures high performance and reliability, making this FET suitable for critical applications.

Maximum Operating Temperature:

The high maximum operating temperature allows the FET to operate in harsh environments without degradation, ensuring consistent performance.

Transistor Element Material:

Silicon-based transistor elements offer low resistance and high reliability, making this FET ideal for high-power applications.

Maximum Turn On Time (ton):

The fast turn-on time ensures quick response and high efficiency in switching applications, improving overall system performance.

Minimum Operating Temperature:

The low minimum operating temperature range allows the FET to function in cold environments without loss of performance or reliability.

Maximum Turn Off Time (toff):

The fast turn-off time minimizes switching losses and improves overall efficiency, making this FET suitable for high-speed applications.

Maximum Drain Current (ID):

With a high maximum drain current rating, this FET can handle high current loads, making it suitable for demanding power applications.

Maximum Drain-Source On Resistance:

The low drain-source on resistance minimizes power losses and improves efficiency in power management systems.

Terminal Position:

The dual terminal position allows for easy connection and configuration in various circuit designs, enhancing versatility and ease of use.

Case Connection:

The drain case connection simplifies circuit design and allows for efficient heat dissipation, contributing to overall system reliability.

Maximum Feedback Capacitance (Crss):

The low feedback capacitance minimizes signal distortion and interference, improving overall system performance in high-frequency applications.

Technical Specifications

Power Field Effect Transistors (FET) SIRA80DP-T1-RE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

101 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

100 A

Maximum Drain Current (ID):

335 A

Maximum Drain-Source On Resistance:

.00062 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

626 pF

JESD-30 Code:

R-PDSO-F5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

500 A

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

105 ns

Maximum Turn On Time (ton):

85 ns

Trade Compliance

SIRA80DP-T1-RE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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