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SIRA18ADP-T1-GE3

Vishay Intertechnology

SIRA18ADP-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SIRA18ADP-T1-GE3 is a N-channel FET with 30V DS breakdown voltage and 70A IDM. Ideal for switching applications, it features 0.0087 ohm max RDS(on) and 5mJ EAS rating. The transistor comes in a small outline package with 5 terminals, suitable for surface mount installation.

Median Price

$0.237

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 39,023 parts In-Stock

1+ parts

$0.680

100+ parts

$0.269

1k+ parts

$0.183

10k+ parts

$0.124

39,023

$0.680

$0.269

$0.183

$0.124

Newark

USA . 9,029 parts In-Stock

1+ parts

$0.743

100+ parts

$0.332

1k+ parts

-

10k+ parts

-

9,029

$0.743

$0.332

-

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TTI

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.118

42,000

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-

-

$0.118

DigiKey

USA . 10,500 parts In-Stock

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-

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$0.122

10,500

-

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-

$0.122

Farnell

UK . 9,029 parts In-Stock

1+ parts

-

100+ parts

$0.240

1k+ parts

$0.163

10k+ parts

$0.139

9,029

-

$0.240

$0.163

$0.139

Element14

Singapore . 9,029 parts In-Stock

1+ parts

-

100+ parts

$0.389

1k+ parts

$0.226

10k+ parts

$0.199

9,029

-

$0.389

$0.226

$0.199

Arrow

USA . 6,000 parts In-Stock

1+ parts

-

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$0.204

6,000

-

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-

$0.204

Verical

USA . 2,677 parts In-Stock

1+ parts

-

100+ parts

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$0.234

10k+ parts

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2,677

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-

$0.234

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 3,000 parts In-Stock

1+ parts

$0.149

100+ parts

-

1k+ parts

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3,000

$0.149

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.170

100+ parts

-

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50

$0.170

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TME

Poland . 2,677 parts In-Stock

1+ parts

$0.660

100+ parts

$0.255

1k+ parts

$0.226

10k+ parts

-

2,677

$0.660

$0.255

$0.226

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Vyrian

USA . 15,183 parts In-Stock

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15,183

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

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$0.163

6,000

-

-

-

$0.163

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.157

3,000

-

-

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$0.157

Bristol Electronics

USA . 160 parts In-Stock

1+ parts

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100+ parts

$0.300

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160

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$0.300

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Prism Electronics

USA . 4 parts In-Stock

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4

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 15,175 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

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15,175

$0.093

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.167

100+ parts

-

1k+ parts

$0.160

10k+ parts

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2,000

$0.167

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$0.160

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Argo Parts USA

USA . 1,819 parts In-Stock

1+ parts

$0.170

100+ parts

-

1k+ parts

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10k+ parts

$0.165

1,819

$0.170

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$0.165

Continental Prestige Electronics

USA . 11,245 parts In-Stock

1+ parts

$0.355

100+ parts

$0.227

1k+ parts

$0.137

10k+ parts

$0.124

11,245

$0.355

$0.227

$0.137

$0.124

Corohmni

South Africa . 288 parts In-Stock

1+ parts

$1.549

100+ parts

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288

$1.549

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,681 parts In-Stock

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21,681

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Metaverse IC Inc.

Canada . 18,000 parts In-Stock

1+ parts

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18,000

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Glotronic Ltd.

UK . 4,800 parts In-Stock

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4,800

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Overview

Unleash the power of the SIRA18ADP-T1-GE3 by Vishay Intertechnology, a top-of-the-line Power Field Effect Transistor designed for high-performance switching applications. With a solid reputation for quality and reliability, Vishay Intertechnology delivers a product that exceeds expectations. This N-CHANNEL FET offers customers unrivaled value with its built-in diode, ensuring seamless operation. Ideal for a variety of uses, this transistor is a game-changer in enhancing mode configurations. Trust Vishay Intertechnology to provide a product that delivers on both performance and durability, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors have high electron mobility, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against voltage spikes.

Transistor Application: SWITCHING

Designed for high-speed switching applications, ensuring efficient operation.

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving space and reducing assembly time.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this transistor can handle higher voltages without damage.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on a circuit board.

Terminal Form: FLAT

Flat terminals provide a secure connection and easy soldering.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high gain and low resistance, improving overall performance.

Maximum Pulsed Drain Current (IDM): 70 A

The high pulsed drain current allows for handling large current spikes, ideal for demanding applications.

Avalanche Energy Rating (EAS): 5 mJ

The high avalanche energy rating provides protection against voltage transients and spikes.

No. of Terminals: 5

With five terminals, this transistor offers versatility in circuit connections.

Package Style (Meter): SMALL OUTLINE

The small outline package is space-saving and compatible with modern electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides high efficiency and low drive power requirements.

Transistor Element Material: SILICON

Silicon-based transistors offer reliability and stability in a wide range of operating conditions.

Maximum Drain Current (ID): 30.6 A

With a high maximum drain current, this transistor can handle significant power loads.

Maximum Drain-Source On Resistance: 0.0087 ohm

The low on-resistance minimizes power loss and heat generation in the transistor.

Terminal Position: DUAL

Dual terminal positioning allows for flexible circuit configurations and connections.

Case Connection: DRAIN

The drain connection provides a secure electrical path for efficient current flow.

Technical Specifications

Power Field Effect Transistors (FET) SIRA18ADP-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

5 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

30.6 A

Maximum Drain-Source On Resistance:

.0087 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

70 A

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SIRA18ADP-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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