Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Vishay Intertechnology's SIRA50ADP-T1-RE3 is a N-channel FET with 40V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 400A max pulsed drain current and 80mJ avalanche energy rating. This MOSFET operates in enhancement mode, has a small outline package style, and can withstand temperatures from -55 to 150°C.
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The plastic/epoxy material used in the package body provides durability and protection for the transistor, ensuring long-term reliability.
N-channel FETs generally have lower on-resistance compared to P-channel FETs, making them more efficient for switching applications.
The 40V breakdown voltage allows for safe operation in various voltage conditions, adding versatility to the FET's application range.
With a high pulsed drain current rating of 400A, this FET can handle surge currents effectively, making it suitable for high-power switching applications.
The high power dissipation rating of 100W ensures efficient heat dissipation, allowing the FET to operate reliably at high power levels.
The FET's ability to operate at a maximum temperature of 150°C ensures it can withstand high-temperature environments without compromising performance.
Power Field Effect Transistors (FET) SIRA50ADP-T1-RE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology
Avalanche Energy Rating (EAS):
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Maximum Power Dissipation (Abs):
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SIRA50ADP-T1-RE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - Mult Dev 07/Jun/2023
PCN Assembly/Origin - New solder paste 26/May/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
SMBJ18CA
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LL4148
Promax-johnton
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358D-T
Philips Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
SS14
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LM358AN
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
FDLL4148
2N2222A
Digitron Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Tesla Elektronicke Soucastky
Onsemi
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
1N4148
Crimson Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SPC TECHNOLOGY/ MULTICOMP
LM555CN
Rca Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
2N7002
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;
FDB035N10A
FDB035N10A by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 120A Max Drain Current, 0.0035 ohm Max RDS(on), and 333W Max Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a built-in DIODE, suitable for high-power requirements.
AUIRFZ44NS
Infineon Technologies
AUIRFZ44NS by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 160A IDM, 150mJ EAS, and 0.0175 ohm RDS(ON). With a max power dissipation of 94W and operating temperature up to 175°C, it's suitable for high-power circuits.
SI4532DY
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Pulsed Drain Current (IDM): 20 A; Package Body Material: PLASTIC/EPOXY;
IRFH5004TRPBF
The Infineon Technologies IRFH5004TRPBF is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A ID. Ideal for SWITCHING applications, it features a built-in diode, 400A IDM, and 0.0026 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 250W and can withstand temperatures up to 150°C.
NTP8G202NG
NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
IRFP460PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Case Connection: DRAIN;
IRFP460LCPBF
Vishay Intertechnology's IRFP460LCPBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 80A IDM and 960mJ EAS ratings. Operating in ENHANCEMENT MODE, it features 0.27 ohm Drain-Source On Resistance and can handle up to 280W power dissipation.
IPZ40N04S5L2R8ATMA1
Infineon's IPZ40N04S5L2R8ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0038 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.
DMN6068SE-13
Diodes Incorporated
DMN6068SE-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 20.8A max pulsed drain current, and 0.068 ohm max drain-source resistance. Suitable for enhancement mode operation in small outline packages at up to 150°C operating temperature.
SQM120P06-07L-GE3
Vishay Intertechnology's SQM120P06-07L-GE3 is a P-channel power FET with 60V DS breakdown voltage, 120A max drain current, and 0.0067 ohm on-resistance. Ideal for high-power applications in enhancement mode operation with 480A pulsed drain current capability.
FDD86102LZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 8 A;
IRLML0100TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Package Style (Meter): SMALL OUTLINE; JEDEC-95 Code: TO-236AB;
FQP47P06
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 188 A;
G3R75MT12D
Genesic Semiconductor
G3R75MT12D by Genesic Semiconductor is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 70A and EAS of 199mJ, this ENHANCEMENT MODE transistor operates b/w -55 to 175 °C, with 0.097 ohm RDS(on) and 182W power dissipation in a RECTANGULAR package.
FDD4685-F085
FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.
IRF640
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; No. of Terminals: 3;
DMP3056LDM-7
DMP3056LDM-7 by Diodes Inc. is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 13A IDM, 0.045 ohm RDS(on), and 150°C Max Operating Temp. Its GULL WING terminals and SMALL OUTLINE package make it suitable for surface mount designs.
FDD4141-F085P
Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;
FDS8858CZ
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8;
NCV8406ASTT3G
NCV8406ASTT3G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. Ideal for use in automotive electronics due to AEC-Q101 standard compliance.
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SIRA01DP-T1-GE3
Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
SIRA90DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Maximum Pulsed Drain Current (IDM): 400 A; JESD-30 Code: R-PDSO-F8;
SIRA99DP-T1-GE3
Vishay Intertechnology's SIRA99DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 195A Drain Current, 104W Power Dissipation, and operates in ENHANCEMENT MODE. With a compact RECTANGULAR package and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in various electronic systems.
SIRA80DP-T1-RE3
Vishay Intertechnology's SIRA80DP-T1-RE3 is a N-channel FET with 30V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 500A max pulsed drain current and 0.00062 ohm max drain-source resistance. Suitable for high-power operations in small outline packages at temperatures ranging from -55 to 150°C.
SIRA90DP-T1-RE3
Vishay Intertechnology's SIRA90DP-T1-RE3 is a N-channel FET with 30V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 400A max pulsed drain current and 0.0008 ohm max drain-source resistance. Suitable for surface mount design, this MOSFET operates in enhancement mode at temperatures ranging from -55 to 150°C.
SIRA58DP-T1-GE3
Vishay Intertechnology's SIRA58DP-T1-GE3 is a N-channel Power FET with 40V DS breakdown voltage, ideal for switching applications. Featuring single configuration with built-in diode, it offers 150A max pulsed drain current and 0.00265 ohm max drain-source resistance. Suitable for enhancement mode operation in small outline package style, operating b/w -55 to 150 °C.
SIRA18DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14.7 W; Maximum Drain Current (Abs) (ID): 33 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SIRA72DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56.8 W; Maximum Drain-Source On Resistance: .0048 ohm; Transistor Application: SWITCHING;
SIRA00DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 5; Avalanche Energy Rating (EAS): 125 mJ; Package Shape: RECTANGULAR;
SIRA18ADP-T1-GE3
Vishay Intertechnology's SIRA18ADP-T1-GE3 is a N-channel FET with 30V DS breakdown voltage and 70A IDM. Ideal for switching applications, it features 0.0087 ohm max RDS(on) and 5mJ EAS rating. The transistor comes in a small outline package with 5 terminals, suitable for surface mount installation.
SIRA88DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: FLAT; Avalanche Energy Rating (EAS): 5 mJ;
SIRA50DP-T1-RE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; No. of Elements: 1; Maximum Turn On Time (ton): 58 ns;
SIRA60DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e3;
SIRA14DP-T1-GE3
Vishay Intertechnology's SIRA14DP-T1-GE3 is a N-channel Power FET with 30V DS breakdown voltage and 130A IDM. Ideal for switching applications, it features a built-in diode, 0.0051 ohm RDS(on), and 150°C max operating temp. Perfect for high-power circuit designs requiring efficient power management in compact spaces.
SIRA10DP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
SIRA10BDP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 43 W; Terminal Form: FLAT; Avalanche Energy Rating (EAS): 20 mJ;
SIRA14BDP-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; Terminal Form: FLAT; Maximum Pulsed Drain Current (IDM): 130 A;
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