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SIRA18DP-T1-GE3

Vishay Intertechnology

SIRA18DP-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SIRA18DP-T1-GE3 is a N-channel power FET with 30V DS breakdown voltage and 70A IDM. Ideal for switching applications, it features a built-in diode, 0.0075 ohm max RDS(on), and operates in enhancement mode. Suitable for surface mount designs, this transistor has a max power dissipation of 14.7W and can withstand temperatures up to 150°C.

Median Price

$0.436

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 700 parts In-Stock

1+ parts

$0.074

100+ parts

$0.074

1k+ parts

$0.074

10k+ parts

-

700

$0.074

$0.074

$0.074

-

Element14

Singapore . 2,411 parts In-Stock

1+ parts

$0.643

100+ parts

$0.384

1k+ parts

$0.248

10k+ parts

$0.219

2,411

$0.643

$0.384

$0.248

$0.219

Farnell

UK . 2,062 parts In-Stock

1+ parts

$0.672

100+ parts

$0.312

1k+ parts

$0.233

10k+ parts

$0.186

2,062

$0.672

$0.312

$0.233

$0.186

DigiKey

USA . 23,490 parts In-Stock

1+ parts

$1.070

100+ parts

$0.435

1k+ parts

$0.303

10k+ parts

-

23,490

$1.070

$0.435

$0.303

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Mouser Electronics

USA . 1,066 parts In-Stock

1+ parts

$1.070

100+ parts

$0.435

1k+ parts

$0.303

10k+ parts

$0.232

1,066

$1.070

$0.435

$0.303

$0.232

TTI

USA . 6,000 parts In-Stock

1+ parts

-

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$0.224

6,000

-

-

-

$0.224

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

-

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Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.229

3,000

-

-

-

$0.229

Verical

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.112

10k+ parts

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700

-

-

$0.112

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.269

100+ parts

-

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600

$0.269

-

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Maritex

Poland . 28,500 parts In-Stock

1+ parts

$0.720

100+ parts

$0.344

1k+ parts

$0.249

10k+ parts

-

28,500

$0.720

$0.344

$0.249

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Chip Stock

USA . 18,500 parts In-Stock

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18,500

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Vyrian

USA . 4,310 parts In-Stock

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4,310

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Speed Components Ltd

Israel . 3,713 parts In-Stock

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3,713

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Bristol Electronics

USA . 30 parts In-Stock

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30

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,219 parts In-Stock

1+ parts

$0.063

100+ parts

-

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4,219

$0.063

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Argo Parts USA

USA . 2,781 parts In-Stock

1+ parts

$0.269

100+ parts

-

1k+ parts

-

10k+ parts

$0.261

2,781

$0.269

-

-

$0.261

Bastille Electronics

Australia . 1,000 parts In-Stock

1+ parts

$0.269

100+ parts

$0.256

1k+ parts

$0.243

10k+ parts

$0.239

1,000

$0.269

$0.256

$0.243

$0.239

Continental Prestige Electronics

USA . 3,027 parts In-Stock

1+ parts

$0.627

100+ parts

$0.344

1k+ parts

$0.279

10k+ parts

$0.198

3,027

$0.627

$0.344

$0.279

$0.198

Perfect Parts

USA . 11,924 parts In-Stock

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11,924

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Assy Fe

Spain . 4,648 parts In-Stock

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4,648

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iodParts Technologies Inc.

India . 2,803 parts In-Stock

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2,803

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Kepictronics

USA . 567 parts In-Stock

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567

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Overview

Discover the power of the SIRA18DP-T1-GE3 by Vishay Intertechnology, a top-of-the-line Power Field Effect Transistor designed for switching applications. With its high-quality construction and N-channel configuration, this transistor offers unmatched performance and reliability. Whether you're looking to optimize your power management system or enhance your circuit design, the SIRA18DP-T1-GE3 delivers exceptional value and efficiency. Trust Vishay Intertechnology to provide innovative solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower ON resistances and higher current capability compared to P-channel FETs, making them suitable for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, adding an extra layer of safety to the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in various electronic circuits.

Surface Mount: YES

Surface-mount technology allows for easy assembly and compact design, making it ideal for space-constrained applications.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages without breakdown, improving overall reliability.

Package Shape: RECTANGULAR

The rectangular shape provides efficient space utilization and easy mounting on PCBs, enhancing overall circuit layout.

Terminal Form: FLAT

Flat terminals ensure secure connections and easy soldering, reducing the risk of electrical failures.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs can be easily turned on and off using voltage signals, allowing for precise control in switching applications.

Maximum Pulsed Drain Current (IDM): 70 A

High maximum pulsed drain current rating enables the FET to handle large surges of current without damage, suitable for high-power applications.

Avalanche Energy Rating (EAS): 10 mJ

A high avalanche energy rating ensures the FET can withstand voltage spikes and transients, increasing overall robustness in the circuit.

Maximum Drain Current (Abs) (ID): 33 A

The high maximum drain current rating of 33A allows for handling of high currents with minimal heat dissipation, improving efficiency.

No. of Terminals: 5

Having 5 terminals allows for additional functionality or connections in the circuit, increasing versatility and design options.

Maximum Power Dissipation (Abs): 14.7 W

With a high maximum power dissipation rating, this FET can handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for high-density mounting, ideal for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers low ON resistance and fast switching speeds, making it suitable for high-frequency applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this FET can withstand elevated temperatures, suitable for demanding industrial environments.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, ensuring stable operation over a wide temperature range.

Maximum Drain-Source On Resistance: 0.0075 ohm

Low drain-source on resistance results in minimal power loss and efficient operation, making it suitable for high-power applications.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design and connections, accommodating different layout configurations.

Case Connection: DRAIN

Drain connection simplifies the circuit layout and enhances thermal management, improving overall performance and reliability.

Technical Specifications

Power Field Effect Transistors (FET) SIRA18DP-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

10 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

33 A

Maximum Drain Current (ID):

33 A

Maximum Drain-Source On Resistance:

.0075 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

70 A

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SIRA18DP-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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