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1N6385-E3/54

Vishay Intertechnology

1N6385-E3/54 by Vishay Intertechnology

1N6385-E3/54 by Vishay Intertechnology is a single transient suppression device with 1500W peak power dissipation and 17.6V breakdown voltage. Ideal for protecting sensitive electronics from voltage spikes in applications such as automotive systems, industrial equipment, and telecommunications devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,716 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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6,716

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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100

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VNN

France . 30 parts In-Stock

1+ parts

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100+ parts

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,442 parts In-Stock

1+ parts

$2.010

100+ parts

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1k+ parts

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1,442

$2.010

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AZTECH Wire

Italy . 782 parts In-Stock

1+ parts

$7.821

100+ parts

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782

$7.821

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Bastille Electronics

Australia . 3,497 parts In-Stock

1+ parts

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3,497

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Perfect Parts

USA . 1,512 parts In-Stock

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1,512

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Overview

Looking for reliable transient suppression devices for your electronic applications? Look no further than the 1N6385-E3/54 by Vishay Intertechnology! With a maximum power dissipation of 1500W and a nominal breakdown voltage of 17.6V, this diode offers superior protection against voltage spikes. Whether you're working in telecommunications, automotive, or industrial sectors, this high-quality product ensures your equipment stays safe and operational. Trust Vishay Intertechnology for top-notch quality and performance that you can rely on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, making it suitable for various applications and environments.

Nominal Breakdown Voltage: 17.6 V

Ensures reliable protection by effectively clamping voltage spikes above this level.

Maximum Power Dissipation: 6.5 W

Ability to withstand high power dissipation ensures the device can handle transient surges effectively.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, ensuring efficient protection against voltage spikes.

Technology: AVALANCHE

Avalanche diode technology allows for quick response and high surge-handling capability, making it a reliable choice for transient suppression.

Technical Specifications

Transient Suppression Devices 1N6385-E3/54 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Minimum Breakdown Voltage:

17.6 V

Nominal Breakdown Voltage:

17.6 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

20.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6385-E3/54 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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