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1N6377G

Onsemi

1N6377G by Onsemi

1N6377G by Onsemi is a Zener diode with 15V max repetitive peak reverse voltage and 25V clamping voltage. It is used for transient suppression in electronics, offering 1500W non-repetitive peak power dissipation. With a temperature range of -65 to 175°C, it ensures reliable protection against voltage spikes.

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Lifecycle Status

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5

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1k+

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VNN

France . 30,835 parts In-Stock

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Digiode

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Nova Conductors

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Ashlea Components Ltd

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Ampacity Inc.

Singapore . 850 parts In-Stock

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Component Stockers USA

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Kulean Microsystems

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SupplyDigital Components

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Argo Parts USA

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Problanco Electronics

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Glotronic Ltd.

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Continental Prestige Electronics

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Türkiye . 616 parts In-Stock

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Overview

Experience the superior quality and reliability of the 1N6377G transient suppression device by Onsemi, a leading manufacturer in the industry. Ideal for a wide range of applications, this product offers unmatched protection against voltage spikes and surges, ensuring the safety and longevity of your electronic systems. With its high performance and durability, the 1N6377G provides exceptional value and peace of mind to customers looking for reliable transient suppression solutions. Trust Onsemi to deliver top-notch products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Can handle high peak power levels, making it suitable for applications with transient voltage spikes.

Package Shape: ROUND

Offers a compact design that can easily fit into various electronic devices.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without any performance degradation, suitable for harsh environments.

Minimum Operating Temperature: -65 °C

Can operate in extreme cold conditions, making it versatile for different environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for voltage suppression, providing reliable protection for connected devices.

Maximum Repetitive Peak Reverse Voltage: 15 V

Offers protection against repeated reverse voltage surges, ensuring long-term reliability for the device.

Maximum Clamping Voltage: 25 V

Limits the voltage spikes to a safe level, preventing damage to connected equipment.

Technical Specifications

Transient Suppression Devices 1N6377G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

17.6 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

25 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

1N6377G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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