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1N6373RL4G

Onsemi

1N6373RL4G by Onsemi

1N6373RL4G by Onsemi is a Zener diode with 5V max repetitive peak reverse voltage and 1500W non-repetitive peak power dissipation. It is a unidirectional transient suppression device in an axial package, ideal for protecting circuits from voltage spikes in automotive applications.

Median Price

$0.336

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.336

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870

$0.336

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Chip Stock

USA . 77,000 parts In-Stock

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77,000

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Vyrian

USA . 3,800 parts In-Stock

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3,800

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VNN

France . 800 parts In-Stock

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800

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Digiode

USA . 531 parts In-Stock

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531

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Cogito LLC

Ukraine . 18 parts In-Stock

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18

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,160 parts In-Stock

1+ parts

$0.079

100+ parts

-

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3,160

$0.079

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Corohmni

South Africa . 428 parts In-Stock

1+ parts

$0.329

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428

$0.329

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Argo Parts USA

USA . 4,886 parts In-Stock

1+ parts

$0.336

100+ parts

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$0.326

4,886

$0.336

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$0.326

Continental Prestige Electronics

USA . 3,304 parts In-Stock

1+ parts

$0.336

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$0.329

3,304

$0.336

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$0.329

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.336

100+ parts

-

1k+ parts

$0.319

10k+ parts

$0.312

500

$0.336

-

$0.319

$0.312

Semicontronic

India . 395 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

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395

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 1,472 parts In-Stock

1+ parts

$3.010

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1,472

$3.010

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AZTECH Wire

Italy . 316 parts In-Stock

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$8.848

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316

$8.848

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Component Stockers USA

USA . 731 parts In-Stock

1+ parts

$99.990

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731

$99.990

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TANS Electronics

Latvia . 4,378 parts In-Stock

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4,378

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SupplyDigital Components

Austria . 2,333 parts In-Stock

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2,333

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Perfect Parts

USA . 1,952 parts In-Stock

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1,952

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Problanco Electronics

Mexico . 1,641 parts In-Stock

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1,641

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Corphita

USA . 1,270 parts In-Stock

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1,270

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UHIMA Technologies

Türkiye . 696 parts In-Stock

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696

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Kulean Microsystems

USA . 16 parts In-Stock

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16

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Overview

Experience superior protection with the 1N6373RL4G by Onsemi, a top-of-the-line transient suppression device. Manufactured by industry leader Onsemi, this product offers unmatched quality and reliability. Ideal for a wide range of applications, this diode provides valuable benefits such as safeguarding your electronics from voltage spikes and surges. Trust in Onsemi to deliver exceptional performance and peace of mind for all your protection needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation for the device, protecting it from external factors and ensuring durability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

The high power dissipation capability allows the device to handle high surge currents and protect connected components effectively.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this device can function reliably even in harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The wide operating temperature range ensures the device can be used in both hot and cold climates without any performance issues.

Maximum Repetitive Peak Reverse Voltage: 5 V

The low maximum reverse voltage ensures protection for sensitive components against small voltage spikes.

Maximum Clamping Voltage: 9.4 V

The low clamping voltage ensures that the protected circuitry is not exposed to excessive voltages, preventing damage.

Technical Specifications

Transient Suppression Devices 1N6373RL4G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

6 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

9.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trade Compliance

1N6373RL4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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