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1N6303CARL4

Onsemi

1N6303CARL4 by Onsemi

1N6303CARL4 by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 200V Breakdown Voltage. It has 171V Max Repetitive Peak Reverse Voltage and 274V Max Clamping Voltage. Ideal for bidirectional polarity protection in transient suppression applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 383 parts In-Stock

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Digiode

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Native Components

USA . 192 parts In-Stock

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Problanco Electronics

Mexico . 6,337 parts In-Stock

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TANS Electronics

Latvia . 5,038 parts In-Stock

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SupplyDigital Components

Austria . 2,639 parts In-Stock

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Northwest PG Solutions

USA . 2,028 parts In-Stock

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Corphita

USA . 1,189 parts In-Stock

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Kulean Microsystems

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Corohmni

South Africa . 282 parts In-Stock

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UHIMA Technologies

Türkiye . 7 parts In-Stock

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Overview

Power up your electronics with the 1N6303CARL4 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their transient suppression devices. Ideal for a wide range of applications, this diode type TRANS VOLTAGE SUPPRESSOR DIODE offers maximum protection against voltage spikes, giving you peace of mind while extending the lifespan of your valuable equipment. Say goodbye to worries about sudden power surges and hello to seamless performance with Onsemi's innovative technology.

Feature Benefit Bullets

Nominal Breakdown Voltage: 200 V

Higher breakdown voltage ensures protection against surges up to 200V, making it suitable for various applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability for easy integration into circuit boards.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans Voltage Suppressor diode type ensures effective transient suppression to protect sensitive components.

Maximum Repetitive Peak Reverse Voltage: 171 V

Ability to handle repetitive peak reverse voltages up to 171V makes it reliable for long-term protection.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against surges from both positive and negative voltage spikes.

Maximum Clamping Voltage: 274 V

Clamping voltage of 274V ensures that the protected circuit is not exposed to voltages exceeding this level, preventing damage.

Technical Specifications

Transient Suppression Devices 1N6303CARL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Nominal Breakdown Voltage:

200 V

Maximum Clamping Voltage:

274 V

JESD-609 Code:

e0

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

171 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

1N6303CARL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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