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1N6385E3

Microsemi

1N6385E3 by Microsemi

1N6385E3 by Microsemi is a unidirectional Trans Voltage Suppressor Diode with 1500W peak power dissipation. It operates b/w -65 to 150°C, clamping voltage of 21.4V, and breakdown voltage of 17.6V. Ideal for transient suppression in electronic circuits.

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Advanced Electronics

New Zealand . 1,145 parts In-Stock

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Ampacity Inc.

Singapore . 1,633 parts In-Stock

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AZTECH Wire

Italy . 1,148 parts In-Stock

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Overview

Elevate your electronic designs with the 1N6385E3 by Microsemi, a top-quality Transient Suppression Device that offers unparalleled protection in a compact and durable package. Manufactured by the trusted industry leader, Microsemi, this diode boasts a cutting-edge technology for maximum performance and reliability. Whether you're looking to safeguard sensitive electronics or enhance power supply systems, this versatile device delivers exceptional clamping voltage and peak reverse power dissipation, ensuring peace of mind and superior protection for your circuits. Upgrade to the Microsemi 1N6385E3 today and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body helps in providing good insulation and protection for the device, making it durable and reliable.

Config: SINGLE

Single configuration makes it easy to integrate into circuit designs and reduces complexity in installations.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high maximum power dissipation, this device can handle large transient power surges effectively, protecting the connected components.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various electronic systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures that the device remains stable and reliable even in harsh environmental conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range ensures that the device can function effectively in cold environments without any issues.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides good conductivity and corrosion resistance, ensuring long-term performance of the device.

Maximum Repetitive Peak Reverse Voltage: 15 V

The maximum repetitive peak reverse voltage specification indicates the maximum voltage the device can handle in reverse bias, ensuring protection against voltage spikes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, this device is specifically designed to suppress voltage transients and protect sensitive electronics from overvoltage events.

Technical Specifications

Transient Suppression Devices 1N6385E3 attributes and parameters. Explore more Transient Suppression Devices devices from Microsemi

Specs

Minimum Breakdown Voltage:

17.6 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

21.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

1.52 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6385E3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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