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1N6373RL4

Onsemi

1N6373RL4 by Onsemi

1N6373RL4 by Onsemi is a Zener diode with a max breakdown voltage of 6V and a max clamping voltage of 7.5V. It is used as a transient suppression device in applications requiring protection against voltage spikes and surges.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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VNN

France . 28,106 parts In-Stock

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Digiode

USA . 712 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 600 parts In-Stock

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600

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Vyrian

USA . 567 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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PC Components Company LLC

USA . 25 parts In-Stock

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Bristol Electronics

USA . 25 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 241 parts In-Stock

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$0.043

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Semicontronic

India . 1,346 parts In-Stock

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$1.010

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$0.985

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$0.980

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Ampacity Inc.

Singapore . 212 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 202 parts In-Stock

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$5.269

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Problanco Electronics

Mexico . 6,041 parts In-Stock

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Kulean Microsystems

USA . 4,257 parts In-Stock

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Continental Prestige Electronics

USA . 3,323 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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SupplyDigital Components

Austria . 1,438 parts In-Stock

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TANS Electronics

Latvia . 1,410 parts In-Stock

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Corphita

USA . 1,349 parts In-Stock

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Bastille Electronics

Australia . 780 parts In-Stock

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UHIMA Technologies

Türkiye . 705 parts In-Stock

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Corohmni

South Africa . 497 parts In-Stock

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Argo Parts USA

USA . 398 parts In-Stock

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Overview

Experience the power of reliable and efficient transient suppression with the 1N6373RL4 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and performance. This product belongs to the category of Transient Suppression Devices, offering superior protection against voltage spikes and surges. With its durable plastic/epoxy body and single configuration, it ensures long-lasting and effective results. Whether you need to safeguard your sensitive electronics or enhance the performance of your circuitry, this product is your go-to solution. Trust in Onsemi's expertise and choose the 1N6373RL4 for unbeatable value, unrivaled benefits, and unmatched advantages.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, making it suitable for various applications and environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability ensures reliable performance and protection against transient voltage spikes.

Package Shape: ROUND

Round shape allows for easy installation and fitting into different types of circuits or devices.

Minimum Breakdown Voltage: 6 V

Low breakdown voltage ensures effective suppression of transient voltage spikes and protection of connected equipment.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode specifically designed for voltage suppression, making it highly effective in protecting electronic circuits.

Technology: ZENER

Zener technology ensures precise voltage regulation and protection against sudden voltage surges, enhancing the reliability of the device.

Maximum Clamping Voltage: 7.5 V

Low clamping voltage ensures that the protected equipment is not subjected to high voltage levels during transient events.

Technical Specifications

Transient Suppression Devices 1N6373RL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

6 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

7.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6373RL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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