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1N6301ARL

Onsemi

1N6301ARL by Onsemi

1N6301ARL by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 1500W peak power dissipation, 170V nominal reference voltage, and -65 to 175 °C operating temperature range. Ideal for transient suppression applications in electronics due to its UNIDIRECTIONAL polarity and AVALANCHE technology.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,803 parts In-Stock

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Vyrian

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Native Components

USA . 771 parts In-Stock

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Northwest PG Solutions

USA . 1,884 parts In-Stock

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TANS Electronics

Latvia . 6,931 parts In-Stock

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SupplyDigital Components

Austria . 4,370 parts In-Stock

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Problanco Electronics

Mexico . 2,582 parts In-Stock

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Kulean Microsystems

USA . 2,104 parts In-Stock

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Corphita

USA . 1,005 parts In-Stock

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UHIMA Technologies

Türkiye . 76 parts In-Stock

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Corohmni

South Africa . 60 parts In-Stock

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Overview

Protect your electronics with the 1N6301ARL from Onsemi, a reliable and high-quality Transient Suppression Device. Designed to handle voltage spikes and surges, this product offers peace of mind for your sensitive equipment. With UL recognition and cutting-edge avalanche technology, this diode ensures maximum protection with a nominal reference voltage of 170V. Trust in Onsemi's expertise in semiconductor manufacturing to keep your devices safe and secure. Upgrade your system today with the 1N6301ARL and experience unparalleled performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device.

Working Test Current: 1 mA

Ensures that the device can handle electrical surges effectively without being damaged.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Capable of handling high levels of power during transient events, protecting connected equipment.

Maximum Voltage Tolerance: 5.3 %

Provides precise voltage regulation and protection against overvoltages.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a variety of environments.

Minimum Operating Temperature: -65 °C

Capable of functioning in extremely cold temperatures without performance degradation.

Minimum Breakdown Voltage: 162 V

Provides reliable protection against voltage spikes to prevent damage to connected devices.

Maximum Breakdown Voltage: 179 V

Ensures that the device activates when voltage surpasses a safe threshold to protect equipment.

Technical Specifications

Transient Suppression Devices 1N6301ARL attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, LOW IMPEDANCE

Maximum Breakdown Voltage:

179 V

Minimum Breakdown Voltage:

162 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

170 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5.3 %

Working Test Current:

1 mA

Trade Compliance

1N6301ARL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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