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1N6379RL4

Onsemi

1N6379RL4 by Onsemi

1N6379RL4 by Onsemi is a Zener diode with 22V max repetitive peak reverse voltage and 1500W non-repetitive peak power dissipation. It is used for transient suppression in applications requiring unidirectional polarity protection, with a max clamping voltage of 32V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,257 parts In-Stock

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Vyrian

USA . 1,716 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 662 parts In-Stock

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$0.172

100+ parts

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$0.165

662

$0.172

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$0.165

Northwest PG Solutions

USA . 703 parts In-Stock

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$0.189

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$0.167

703

$0.189

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Corohmni

South Africa . 41 parts In-Stock

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$0.192

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41

$0.192

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TANS Electronics

Latvia . 8,020 parts In-Stock

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Kulean Microsystems

USA . 7,358 parts In-Stock

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Problanco Electronics

Mexico . 5,602 parts In-Stock

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SupplyDigital Components

Austria . 3,732 parts In-Stock

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Corphita

USA . 796 parts In-Stock

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UHIMA Technologies

Türkiye . 40 parts In-Stock

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Overview

Get superior protection with the 1N6379RL4 by Onsemi! As a leading manufacturer in the industry, Onsemi delivers high-quality transient suppression devices that provide reliable defense against voltage spikes and surges. Ideal for a variety of applications, this product offers peace of mind by safeguarding your electronics from damage. Trust in Onsemi's expertise and invest in the 1N6379RL4 for unparalleled value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection against environmental factors, making the device more durable and long-lasting.

Config: SINGLE

Simplifies installation and maintenance, making it easier for users to handle.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Provides high power handling capability, ensuring protection against transient voltage spikes.

Package Shape: ROUND

Allows for efficient placement and mounting within electronic systems.

No. of Terminals: 2

Simplifies connection and integration within circuitry.

Package Style (Meter): LONG FORM

Provides a standardized form factor for easy compatibility with various applications.

Terminal Finish: TIN

Ensures good electrical conductivity and corrosion resistance.

Terminal Position: AXIAL

Facilitates easy integration and connection within circuit boards.

Case Connection: ISOLATED

Helps prevent potential short circuits and improves overall safety.

Maximum Power Dissipation: 5 W

Efficiently dissipates excess power to protect connected devices.

Minimum Breakdown Voltage: 25.9 V

Provides effective protection against voltage surges.

Peak Reflow Temperature °C: 260

Withstands high-temperature reflow processes during manufacturing.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Designed specifically for transient voltage suppression applications.

Technology: ZENER

Utilizes Zener diode technology for precise voltage clamping and protection.

Terminal Form: WIRE

Facilitates easy connection and integration within circuit boards.

Maximum Repetitive Peak Reverse Voltage: 22 V

Suitable for applications requiring protection against lower voltage transients.

Polarity: UNIDIRECTIONAL

Provides protection against voltage spikes in only one direction.

Maximum Clamping Voltage: 32 V

Clamps voltage spikes at a safe level to protect downstream components.

Diode Element Material: SILICON

Uses silicon material for diode element, ensuring high performance and reliability.

Technical Specifications

Transient Suppression Devices 1N6379RL4 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE

Minimum Breakdown Voltage:

25.9 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

32 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

22 V

Sub-Category:

Transient Suppressors

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1N6379RL4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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