Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Toshiba SSM3J328R,LF is a P-CHANNEL FET with 20V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 24A IDM and 0.0298 ohm RDS(on). Its SMALL OUTLINE package makes it suitable for compact designs requiring high current handling capabilities.
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The plastic/epoxy package body material makes the transistor lightweight and durable, ideal for various applications.
P-channel transistors are efficient for switching applications and can handle higher voltages compared to N-channel transistors.
The built-in diode simplifies circuit design and protects against reverse current flow, offering added versatility and protection.
Designed specifically for switching applications, ensuring efficient and reliable performance in various electronic circuits.
The surface mount capability allows for easy installation on circuit boards, saving space and simplifying assembly.
With a minimum breakdown voltage of 20V, this transistor can handle moderate voltage levels without risk of damage.
The rectangular package shape offers easy mounting and alignment on PCBs, optimizing space utilization.
The flat terminal form ensures secure and stable connections, contributing to the overall reliability of the transistor.
The enhancement mode operation allows for low ON resistance and fast switching speeds, enhancing overall performance.
With a maximum pulsed drain current of 24A, the transistor can handle peak current demands in transient conditions.
The maximum drain current rating of 6A ensures reliable operation within the specified current limits.
The 3-terminal configuration simplifies circuit connections and facilitates easy integration into electronic systems.
With a maximum power dissipation of 1W, the transistor can operate efficiently without risk of overheating.
The small outline package style saves space on PCBs, making it suitable for compact electronic devices.
The metal-oxide semiconductor technology offers high efficiency and reliable performance in a variety of applications.
Silicon is a widely used semiconductor material known for its stability, durability, and consistent performance.
The low drain-source on resistance of 0.0298 ohms minimizes power loss and improves efficiency in switching applications.
The dual terminal position allows for versatile and flexible mounting options, accommodating different circuit layouts.
Small Signal Field Effect Transistors (FET) SSM3J328R,LF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
SSM3J328R,LF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
LL4148
Transys Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
First Components International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Texas Instruments
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM107H
General Electric Solid State
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
Vishay Telefunken
Unitrode
BSS138
Vishay Intertechnology
Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
LM107H/883
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
STM32H753IIT6
STMicroelectronics
STM32H753IIT6 by STMicroelectronics is a 32-bit microcontroller with 176 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs and 2-Ch 12-Bit DACs, suitable for industrial applications requiring high-speed data processing and connectivity via CAN, ETHERNET, USB, and more.
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
Fairchild Semiconductor
MMBT2907ALT1G
Rochester Electronics
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;
LM7805CT
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
SS14
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Pulse Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803ADWG4
ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.
Daco Semiconductor
NTS4101PT1G
Onsemi
NTS4101PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.12 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max Drain Current of 1.37A and can withstand temperatures up to 150°C.
2N7002BKM,315
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PBCC-N3; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;
FDN337N-F169
Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);
FDV303N
FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.
ZXMP4A16GTA
Diodes Incorporated
ZXMP4A16GTA by Diodes Inc. is a P-CHANNEL FET with 40V DS breakdown voltage, 4.6A max drain current, and 0.06 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation at up to 150°C.
2N7000-G
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 60 V;
DMG1012UW-7
DMG1012UW-7 by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 1A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.45 ohm on-resistance. Its small outline package and -55 to 150°C operating range make it suitable for various electronic devices.
MMBF170LT3
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
2N7000
Tt Electronics Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 60 V; Maximum Drain-Source On Resistance: 5 ohm; Qualification: Not Qualified;
IRLML6344TRPBF
Infineon Technologies
Small Signal Field-Effect Transistors; Qualification: Not Qualified; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 5 A; Maximum Time At Peak Reflow Temperature (s): 30;
BS170
Vishay Intertechnology's BS170 is a N-channel FET with 60V DS breakdown voltage and 0.5A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.83W.
2N7002DW
Lite-on Semiconductor
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain-Source On Resistance: 7.5 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Feedback Capacitance (Crss): 5 pF;
BS250P
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): IN-LINE;
SI4925DDY-T1-GE3
SI4925DDY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 2 elements and built-in diode. It operates in enhancement mode for switching applications, with max drain current of 8A and min DS breakdown voltage of 30V. This small outline transistor has a max power dissipation of 5W, operating temperature range from -55 to 150°C, and matte tin terminal finish.
FDV304P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
2N7002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
MMBFJ113
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Qualification: Not Qualified; No. of Terminals: 3;
FDN339AN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain-Source On Resistance: .035 ohm; Terminal Form: GULL WING;
2N7000_D26Z
2N7000_D26Z by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 0.4W Power Dissipation and -55 to 150 °C operating temperature range, it offers reliable performance.
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SSM3J332R,LF(T
Toshiba
Toshiba SSM3J332R,LF(T is a P-CHANNEL FET with 30V DS breakdown voltage and 6A max drain current. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it offers low 0.042 ohm on-resistance and can handle up to 1W power dissipation.
SSM3J332R,LF
Toshiba's SSM3J332R,LF is a P-CHANNEL FET with 30V DS breakdown voltage and 6A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has 0.042 ohm max on-resistance for efficient performance.
SSM3J332R,LF(B
SSM3J332R,LF(B by Toshiba is a P-CHANNEL FET with 30V DS breakdown voltage and 6A ID. Ideal for switching applications, it features a 0.042 ohm RDS(on) and operates in enhancement mode. This small outline transistor has a rectangular shape, flat terminals, and dual terminal position.
SSM3J328R,LF(T
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
SSM3J351RLF(T
Toshiba SSM3J351RLF(T is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 3.5A ID and 0.184 ohm RDS(on). Operating at up to 150°C, this MOSFET is AEC-Q101 compliant for automotive use.
SSM3J351R,LF(T
Toshiba SSM3J351R,LF(T is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 3.5A ID, and 0.184 ohm RDS(on). Operating in ENHANCEMENT MODE with 50pF Crss, it has a max temp of 150°C and AEC-Q101 compliance.
SSM3J328R,LF(B
Toshiba SSM3J328R,LF(B is a P-CHANNEL FET with 20V DS breakdown voltage and 6A max drain current. Ideal for switching applications due to its single configuration with built-in diode and 29.8 ohm max on resistance. Operates in enhancement mode at up to 150°C, making it suitable for high-power tasks.
SSM3J328R,LF(A
Toshiba SSM3J328R,LF(A is a P-CHANNEL FET with 20V DS breakdown voltage. Ideal for switching applications, it features a max ID of 6A and 0.0298 ohm RDS(on). Its small outline package and MOSFET technology make it suitable for compact electronic designs.
SSM3J356RLF(T
Small Signal Field-Effect Transistors;
SSM3J356R,LF(T
SSM3J356R,LF(B
Toshiba SSM3J356R,LF(B is a P-CHANNEL FET with 60V DS breakdown voltage and 6A IDM. Ideal for switching applications, it operates in enhancement mode with 0.4 ohm RDS(on) and 25pF Crss.
SSM3K7002F(T5LFT)
SSM3K329R,LF(T
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SSM3K339R,LF
SSM3K329R,LF
Toshiba's SSM3K329R,LF is a N-CHANNEL FET with 30V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style for surface mount assembly.
SSM3K329R,LF(B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.5 A; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;
SSM3J338RLF(T
SSM3K2615R,LF
Toshiba SSM3K2615R,LF is a N-CHANNEL FET with 60V DS breakdown voltage. It's a single transistor for switching applications with built-in diode and resistor. Operating in enhancement mode, it has 2A max drain current and 0.44 ohm on-resistance, suitable for AEC-Q101 standard automotive electronics.
SSM3K339RLF(T
Toshiba SSM3K339RLF(T is a N-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE Configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has 2A ID and 0.208 ohm RDS(on), suitable for high-temp environments up to 150°C.
SSM3K333RG-AE3-R
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
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