Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Toshiba SSM3K329R,LF(B is a N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications due to 3.5A ID and 0.126 ohm RDS(on). Features ENHANCEMENT MODE operation in SMALL OUTLINE package.
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ACDS - Activité Composants Distribution Service
Vyrian
Nova Conductors
Ampacity Inc.
$0.094
Semicontronic
$0.092
$0.091
CoreStaff
$0.459
$0.126
$0.085
Corohmni
$0.635
Advanced Electronics
$1.349
$1.282
Aztec Data Supply Inc.
$1.570
Perfect Parts
GreenTree Electronics
Continental Prestige Electronics
Argo Parts USA
Bastille Electronics
The plastic/epoxy package body material provides good insulation and protection for the transistor, ensuring reliable performance in various operating conditions.
N-channel transistors typically have better conductivity and higher mobility compared to P-channel transistors, making them suitable for switching applications.
The built-in diode helps protect the transistor from reverse voltage spikes, enhancing its durability and reliability in switching applications.
Designed specifically for switching applications, this transistor offers efficient performance and fast switching speeds.
Being surface mountable makes it easier to mount the transistor on a PCB, saving space and facilitating automated assembly processes.
The high breakdown voltage ensures the transistor can handle higher voltages without damage, increasing its robustness in different operating conditions.
The rectangular package shape allows for easy integration into various electronic circuits, optimizing space utilization and layout efficiency.
The flat terminal form provides a secure connection and easy soldering onto a PCB, ensuring stable electrical contact and reliable performance.
Enhancement mode transistors offer better control and higher transconductance, making them suitable for efficient switching applications.
With three terminals, this transistor can easily be connected in a circuit for switching or amplification purposes, providing versatility in design applications.
The small outline package style saves space on the PCB, making it suitable for compact electronic devices and enabling high-density board designs.
Metal-oxide semiconductor technology offers high input impedance, low power consumption, and fast switching speeds, making the transistor efficient for various applications.
Silicon transistors provide good thermal stability, high reliability, and consistent performance, offering long-term durability in demanding operating conditions.
The high maximum drain current rating allows the transistor to handle higher current loads, making it suitable for power switching applications with increased efficiency.
The low on-resistance ensures minimal power loss and high efficiency during operation, making the transistor ideal for low voltage drop and high current applications.
The dual terminal position provides flexibility in circuit connections and layout design, allowing for easy integration into various electronic systems.
Small Signal Field Effect Transistors (FET) SSM3K329R,LF(B attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
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Operating Mode:
Package Body Material:
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Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
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Transistor Element Material:
SSM3K329R,LF(B Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
LM317T
Linear Technology
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Operating Temperature (TJ-Min): 0 Cel; No. of Functions: 1; JESD-609 Code: e0;
1N4148
North American Philips Discrete Products Div
RECTIFIER DIODE; Surface Mount: NO; Maximum Forward Voltage (VF): 1 V; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V; Terminal Finish: Tin/Lead (Sn/Pb);
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
SS14
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; No. of Phases: 1; Config: SINGLE; Maximum Operating Temperature: 125 Cel;
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
1N4148WS
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS1100T3G
Onsemi
MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.
M24308/2-1F
Tyco Electronics Amp
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Rugao Dachang Electronic
RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;
2N2222A
General Transistor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002-T1-E3
Vishay Intertechnology
Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
ULN2803A
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
M39029/56-351
Carlisle Interconnect Technologies
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Type: CRIMP; Removal Tools: M81969/8-06, M81969/14-02; IEC Conformity: NO; Contact Gender: FEMALE;
LL4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
International Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138
Inter F E T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
2N7002K
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .3 A; Maximum Feedback Capacitance (Crss): 5 pF; Terminal Form: GULL WING;
2N7002/HAMR
Nexperia
2N7002/HAMR by Nexperia is a small signal N-channel FET with a min DS breakdown voltage of 60V. It is used for switching applications and operates in enhancement mode. With a max drain current of 0.3A and a max drain-source on resistance of 5 ohm, it offers efficient performance.
MMBF170
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Terminal Form: GULL WING; Terminal Position: DUAL;
FQT1N60CTF-WS
FQT1N60CTF-WS by Onsemi is a N-channel FET with 600V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminal form, and 2.1W max power dissipation. Suitable for enhancement mode operation at up to 150°C, it has a drain-source on resistance of 11.5 ohm and max drain current of 0.2A.
2N7002DW
Secos
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Maximum Power Dissipation Ambient: .2 W;
ZXM61N02FTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1; Maximum Drain-Source On Resistance: .18 ohm;
BSS138BKW,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
BSS138WH6433XTMA1
Infineon Technologies
Infineon's BSS138WH6433XTMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5W max power dissipation and -55 to 150°C operating temperature range, it offers reliable performance in various electronic devices.
2N7002PW
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Additional Features: LOGIC LEVEL COMPATIBLE; Peak Reflow Temperature (C): 260;
ZVP3310FTA
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3;
2N7002
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
DMP2004K-7
DMP2004K-7 by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.6A Drain Current, and 0.9 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with GULL WING terminals, operating at up to 150°C.
FDC6312P
FDC6312P by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 20V DS Breakdown Voltage, 2.3A Drain Current, and 0.115 ohm On Resistance. With a max operating temperature of 150°C, this MOSFET is ideal for small outline packages in various electronic devices.
NDS351AN
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e3; JESD-30 Code: R-PDSO-G3;
BSS138LT7G
BSS138LT7G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 3.5 ohm max RDS(on), and 150°C max operating temp. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount setups.
BSS138NH6327
BSS138NH6327 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE, with 0.23A Drain Current and 3.5 ohm On Resistance. Ideal for small outline applications requiring high power dissipation up to 0.36W at temperatures ranging from -55 to 150 °C.
BSS138BK
Micro Commercial Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .36 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260;
2N7002W-7-F
2N7002W-7-F by Diodes Inc. is a N-channel FET with 60V breakdown voltage, 0.115A drain current, and 7.5 ohm on-resistance. Ideal for switching applications in small outline packages, it operates from -55 to 150°C with a peak reflow temp of 260°C.
FDN304PZ_NL
Fairchild Semiconductor's FDN304PZ_NL is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2.4A Drain Current, 0.052 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor comes in a PLASTIC/EPOXY package with GULL WING terminals and can handle up to 150°C operating temperature.
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SSM3J332R,LF(T
Toshiba
Toshiba SSM3J332R,LF(T is a P-CHANNEL FET with 30V DS breakdown voltage and 6A max drain current. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it offers low 0.042 ohm on-resistance and can handle up to 1W power dissipation.
SSM3J332R,LF
Toshiba's SSM3J332R,LF is a P-CHANNEL FET with 30V DS breakdown voltage and 6A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has 0.042 ohm max on-resistance for efficient performance.
SSM3J332R,LF(B
SSM3J332R,LF(B by Toshiba is a P-CHANNEL FET with 30V DS breakdown voltage and 6A ID. Ideal for switching applications, it features a 0.042 ohm RDS(on) and operates in enhancement mode. This small outline transistor has a rectangular shape, flat terminals, and dual terminal position.
SSM3J328R,LF(T
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
SSM3J328R,LF
Toshiba SSM3J328R,LF is a P-CHANNEL FET with 20V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 24A IDM and 0.0298 ohm RDS(on). Its SMALL OUTLINE package makes it suitable for compact designs requiring high current handling capabilities.
SSM3J351RLF(T
Toshiba SSM3J351RLF(T is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 3.5A ID and 0.184 ohm RDS(on). Operating at up to 150°C, this MOSFET is AEC-Q101 compliant for automotive use.
SSM3J351R,LF(T
Toshiba SSM3J351R,LF(T is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 3.5A ID, and 0.184 ohm RDS(on). Operating in ENHANCEMENT MODE with 50pF Crss, it has a max temp of 150°C and AEC-Q101 compliance.
SSM3J328R,LF(B
Toshiba SSM3J328R,LF(B is a P-CHANNEL FET with 20V DS breakdown voltage and 6A max drain current. Ideal for switching applications due to its single configuration with built-in diode and 29.8 ohm max on resistance. Operates in enhancement mode at up to 150°C, making it suitable for high-power tasks.
SSM3J328R,LF(A
Toshiba SSM3J328R,LF(A is a P-CHANNEL FET with 20V DS breakdown voltage. Ideal for switching applications, it features a max ID of 6A and 0.0298 ohm RDS(on). Its small outline package and MOSFET technology make it suitable for compact electronic designs.
SSM3J356RLF(T
Small Signal Field-Effect Transistors;
SSM3J356R,LF(T
SSM3J356R,LF(B
Toshiba SSM3J356R,LF(B is a P-CHANNEL FET with 60V DS breakdown voltage and 6A IDM. Ideal for switching applications, it operates in enhancement mode with 0.4 ohm RDS(on) and 25pF Crss.
SSM3K7002F(T5LFT)
SSM3K329R,LF(T
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SSM3K339R,LF
SSM3K329R,LF
Toshiba's SSM3K329R,LF is a N-CHANNEL FET with 30V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style for surface mount assembly.
SSM3J338RLF(T
SSM3K2615R,LF
Toshiba SSM3K2615R,LF is a N-CHANNEL FET with 60V DS breakdown voltage. It's a single transistor for switching applications with built-in diode and resistor. Operating in enhancement mode, it has 2A max drain current and 0.44 ohm on-resistance, suitable for AEC-Q101 standard automotive electronics.
SSM3K339RLF(T
Toshiba SSM3K339RLF(T is a N-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE Configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has 2A ID and 0.208 ohm RDS(on), suitable for high-temp environments up to 150°C.
SSM3K333RL-AE3-R
Unisonic Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Package Shape: RECTANGULAR; Terminal Position: DUAL;
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