Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1;
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Small Signal Field Effect Transistors (FET) SSM3J328R,LF(T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba
Moisture Sensitivity Level (MSL):
SSM3J328R,LF(T Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
BSS138
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
LM7805CT/NOPB
Texas Instruments
LM7805CT/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a package style of flange mount, and offers low line/load regulation making it ideal for various electronic applications requiring stable power supply.
SS14
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
USB2514BI-AEZG
Microchip Technology
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
C0603C104K5RACTU
KEMET Corporation
KEMET C0603C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V URdc. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
SMBJ18CA
Protek Devices
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317TG
LM317TG by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max output current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount, with a rectangular shape and through-hole terminals for easy installation.
BAV99
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Taiwan Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBR0520LT1G
Onsemi
MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.
LM317T
Fairchild Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Output Current-1: 1.5 A; No. of Outputs: 1; Qualification Status: Not Qualified;
Forward International Electronics
RECTIFIER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; No. of Phases: 1; Maximum Output Current: 1 A;
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
06035C104KAT2A
KYOCERA AVX
06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.
CRCW040210K0FKED
Vishay Intertechnology
Vishay Intertechnology's CRCW040210K0FKED is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.063 W power dissipation. Ideal for surface mount applications in electronics due to its compact SMT package style and high operating temperature range of -55 to 155 °C.
NE555D
STMicroelectronics
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM358AN
Samsung
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
NC7WZ07P6X
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
1N4148
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
TN2404K-T1-GE3
Vishay Intertechnology's TN2404K-T1-GE3 is a N-channel FET with 240V DS breakdown voltage, 0.2A max drain current, and 4 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.36W at 150°C.
BS170
Vishay Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: LOGIC LEVEL COMPATIBLE; No. of Elements: 1; Transistor Application: SWITCHING;
FDMA1032CZ
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Additional Features: ESD PROTECTION; Maximum Drain Current (Abs) (ID): 3.7 A;
FDN5630_NL
Fairchild Semiconductor's FDN5630_NL is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 1.7A Drain Current, 0.1 ohm On Resistance, and operates in ENHANCEMENT MODE. The PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C temperature.
2N7002KW
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .115 A; Terminal Position: DUAL; Qualification: Not Qualified;
2N7002K
2N7002K by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 2 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 150 °C.
BSS308PEH6327XTSA1
Infineon Technologies
BSS308PEH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.08 ohm RDS(on), and 2A ID. Ideal for small outline applications, it operates in enhancement mode with a max temperature of 150°C. Suitable for various electronic devices requiring high performance in compact designs.
BSS84W-7-F
Diodes Incorporated
BSS84W-7-F by Diodes Inc. is a P-channel FET with 50V breakdown voltage and 0.13A drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.2W. This MOSFET comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.
FDV304PD87Z
Fairchild Semiconductor's FDV304PD87Z is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A ID, and 1.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150°C. The SMALL OUTLINE package features GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
NDS332P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
2N7000TA
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
BSS123
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 100 V;
2N7002-TP
Micro Commercial Components
2N7002-TP by Micro Commercial Components is a N-channel FET with 60V breakdown voltage and 7.5 ohm on-resistance, ideal for switching applications. Operating in enhancement mode, it has a max drain current of 0.34A and peak reflow temperature of 260°C. This small outline transistor features a gull wing terminal form and metal-oxide semiconductor technology.
NTS4101PT1G
NTS4101PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and 0.12 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max Drain Current of 1.37A and can withstand temperatures up to 150°C.
ZXMP6A13FTA
ZXMP6A13FTA by Diodes Inc. is a P-CHANNEL FET with 60V DS Breakdown Voltage, 1.1A Drain Current, and 0.4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with ENHANCEMENT MODE operation up to 150°C.
FDN358P
FDN358P by Onsemi is a P-CHANNEL FET with 30V DS breakdown voltage and 1.5A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a 0.125 ohm max on-resistance. The small outline package with gull wing terminals can withstand up to 260°C peak reflow temperature.
LND150N3-GP002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): CYLINDRICAL; Maximum Drain-Source On Resistance: 1000 ohm;
FDG6332C
The Onsemi FDG6332C is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include max drain current of 0.7A, min DS breakdown voltage of 20V, and max power dissipation of 0.3W.
2N7002KW_R1_00001
2N7002KW_R1_00001 by Panjit Int. is a N-CHANNEL FET with 60V DS breakdown voltage, 0.115A ID, and 3 ohm RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Features GULL WING terminals in a SMALL OUTLINE package style.
FDN360P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;
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SSM3J332R,LF(T
Toshiba
Toshiba SSM3J332R,LF(T is a P-CHANNEL FET with 30V DS breakdown voltage and 6A max drain current. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it offers low 0.042 ohm on-resistance and can handle up to 1W power dissipation.
SSM3J332R,LF
Toshiba's SSM3J332R,LF is a P-CHANNEL FET with 30V DS breakdown voltage and 6A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, this MOSFET has 0.042 ohm max on-resistance for efficient performance.
SSM3J332R,LF(B
SSM3J332R,LF(B by Toshiba is a P-CHANNEL FET with 30V DS breakdown voltage and 6A ID. Ideal for switching applications, it features a 0.042 ohm RDS(on) and operates in enhancement mode. This small outline transistor has a rectangular shape, flat terminals, and dual terminal position.
SSM3J328R,LF
Toshiba SSM3J328R,LF is a P-CHANNEL FET with 20V DS Breakdown Voltage. Ideal for SWITCHING applications, it has 24A IDM and 0.0298 ohm RDS(on). Its SMALL OUTLINE package makes it suitable for compact designs requiring high current handling capabilities.
SSM3J351RLF(T
Toshiba SSM3J351RLF(T is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 3.5A ID and 0.184 ohm RDS(on). Operating at up to 150°C, this MOSFET is AEC-Q101 compliant for automotive use.
SSM3J351R,LF(T
Toshiba SSM3J351R,LF(T is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 3.5A ID, and 0.184 ohm RDS(on). Operating in ENHANCEMENT MODE with 50pF Crss, it has a max temp of 150°C and AEC-Q101 compliance.
SSM3J328R,LF(B
Toshiba SSM3J328R,LF(B is a P-CHANNEL FET with 20V DS breakdown voltage and 6A max drain current. Ideal for switching applications due to its single configuration with built-in diode and 29.8 ohm max on resistance. Operates in enhancement mode at up to 150°C, making it suitable for high-power tasks.
SSM3J328R,LF(A
Toshiba SSM3J328R,LF(A is a P-CHANNEL FET with 20V DS breakdown voltage. Ideal for switching applications, it features a max ID of 6A and 0.0298 ohm RDS(on). Its small outline package and MOSFET technology make it suitable for compact electronic designs.
SSM3J356RLF(T
Small Signal Field-Effect Transistors;
SSM3J356R,LF(T
SSM3J356R,LF(B
Toshiba SSM3J356R,LF(B is a P-CHANNEL FET with 60V DS breakdown voltage and 6A IDM. Ideal for switching applications, it operates in enhancement mode with 0.4 ohm RDS(on) and 25pF Crss.
SSM3K7002F(T5LFT)
SSM3K329R,LF(T
Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SSM3K339R,LF
SSM3K329R,LF
Toshiba's SSM3K329R,LF is a N-CHANNEL FET with 30V DS breakdown voltage and 3.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package style for surface mount assembly.
SSM3K329R,LF(B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 3.5 A; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;
SSM3J338RLF(T
SSM3K2615R,LF
Toshiba SSM3K2615R,LF is a N-CHANNEL FET with 60V DS breakdown voltage. It's a single transistor for switching applications with built-in diode and resistor. Operating in enhancement mode, it has 2A max drain current and 0.44 ohm on-resistance, suitable for AEC-Q101 standard automotive electronics.
SSM3K339RLF(T
Toshiba SSM3K339RLF(T is a N-CHANNEL FET with 40V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE Configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has 2A ID and 0.208 ohm RDS(on), suitable for high-temp environments up to 150°C.
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