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XBUF634AIDR

Texas Instruments

XBUF634AIDR by Texas Instruments

XBUF634AIDR by Texas Instruments is a buffer amplifier with 65000uV max input offset voltage, 210MHz nominal bandwidth, and 2uA max average bias current. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,882 parts In-Stock

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Digiode

USA . 3,514 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Parana Technologies

USA . 1,761 parts In-Stock

1+ parts

$3.044

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$3.556

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1,761

$3.044

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$3.556

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DigiPath Technology Company

USA . 1,924 parts In-Stock

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$3.352

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$3.083

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$3.352

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IDEA Electronic Components Group

UK . 1,857 parts In-Stock

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$3.420

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$3.078

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$3.420

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ChromeModa Solutions

Germany . 537 parts In-Stock

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$3.420

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$2.804

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537

$3.420

$2.804

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AZTECH Wire

Italy . 792 parts In-Stock

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$5.637

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One Stop Electronics

USA . 477 parts In-Stock

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$7.410

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477

$7.410

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Ampacity Inc.

Singapore . 312 parts In-Stock

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$7.410

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Continental Prestige Electronics

USA . 3,190 parts In-Stock

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Corphita

USA . 3,069 parts In-Stock

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Argo Parts USA

USA . 2,985 parts In-Stock

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Bastille Electronics

Australia . 120 parts In-Stock

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Overview

Unleash the power of precision with the XBUF634AIDR by Texas Instruments. Crafted with meticulous attention to detail, this buffer amplifier offers unparalleled quality and reliability that only a trusted manufacturer like Texas Instruments can deliver. Ideal for automotive applications, this small outline package amplifier boasts a nominal bandwidth of 210 MHz and a maximum supply voltage limit of 20 V, ensuring optimal performance in any setting. Elevate your projects with the XBUF634AIDR and experience the difference that superior craftsmanship can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the product lightweight and durable, perfect for various applications.

Maximum Input Offset Voltage: 65000 uV

The high maximum input offset voltage ensures accurate signal amplification without distortion.

Maximum Average Bias Current (IIB): 2 uA

Low bias current results in minimal power consumption and reduced heat dissipation, making the product energy efficient.

Surface Mount: YES

With surface mount capability, the product can be easily integrated into compact circuit designs, saving space.

Nominal Supply Voltage / Vsup (V): 15

The nominal supply voltage of 15V provides stable power for the amplifier to operate efficiently.

Maximum Supply Voltage Limit: 20 V

With a maximum supply voltage limit of 20V, the product is versatile and can handle a wide range of power inputs.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures the product can perform reliably in various environmental conditions.

Width: 3.895 mm

The compact width of the product allows for dense packing of components on a circuit board, ideal for space-constrained applications.

Nominal Bandwidth (3dB): 210 MHz

The high nominal bandwidth of 210MHz enables the product to handle high-frequency signals with precision.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures the product is suitable for use in automotive applications, where temperature fluctuations are common.

Technical Specifications

Buffer Amplifiers XBUF634AIDR attributes and parameters. Explore more Buffer Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Buffer Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

210 MHz

Nominal Slew Rate:

3750 V/us

Input Offset Voltage Limit:

65 mV

Peak Bias Current:

2 uA

Maximum Bias Current (IIB) @25 °C:

2 uA

Operational Characteristics

Maximum Supply Current:

12 mA

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.193 in (4.905 mm)

Width:

0.153 in (3.895 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Style:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Package Equivalence Code:

SOP8,.25

Trade Compliance

XBUF634AIDR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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