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UCC5310MCD

Texas Instruments

UCC5310MCD by Texas Instruments

UCC5310MCD by Texas Instruments is a MOSFET gate driver with a max supply voltage of 33V and built-in transient and under voltage protections. It operates in automotive-grade temperatures from -40 to 125°C, offering a peak output current of 2.2A for driving IGBTs/MOSFETs in various applications. With a compact small outline package style, it features fast turn-on/off times of 0.075us and dual terminal positions for efficient performance.

Median Price

$2.091

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 30,695 parts In-Stock

1+ parts

$1.792

100+ parts

$1.480

1k+ parts

$0.800

10k+ parts

-

30,695

$1.792

$1.480

$0.800

-

Mouser Electronics

USA . 330 parts In-Stock

1+ parts

$2.390

100+ parts

$1.720

1k+ parts

$1.410

10k+ parts

$1.080

330

$2.390

$1.720

$1.410

$1.080

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 89 parts In-Stock

1+ parts

$1.696

100+ parts

-

1k+ parts

-

10k+ parts

-

89

$1.696

-

-

-

Digiode

USA . 3,720 parts In-Stock

1+ parts

$1.702

100+ parts

-

1k+ parts

-

10k+ parts

-

3,720

$1.702

-

-

-

Chip Stock

USA . 45,995 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

45,995

-

-

-

-

Vyrian

USA . 3,758 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,758

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 15,441 parts In-Stock

1+ parts

$1.520

100+ parts

$1.482

1k+ parts

$1.474

10k+ parts

-

15,441

$1.520

$1.482

$1.474

-

Ampacity Inc.

Singapore . 15,242 parts In-Stock

1+ parts

$1.520

100+ parts

-

1k+ parts

-

10k+ parts

-

15,242

$1.520

-

-

-

Corphita

USA . 304 parts In-Stock

1+ parts

$1.613

100+ parts

-

1k+ parts

-

10k+ parts

-

304

$1.613

-

-

-

Argo Parts USA

USA . 4,774 parts In-Stock

1+ parts

$1.696

100+ parts

-

1k+ parts

-

10k+ parts

-

4,774

$1.696

-

-

-

Continental Prestige Electronics

USA . 1,653 parts In-Stock

1+ parts

$1.696

100+ parts

-

1k+ parts

-

10k+ parts

$1.662

1,653

$1.696

-

-

$1.662

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$1.696

100+ parts

-

1k+ parts

$1.611

10k+ parts

$1.577

1,000

$1.696

-

$1.611

$1.577

Corohmni

South Africa . 559 parts In-Stock

1+ parts

$1.696

100+ parts

-

1k+ parts

-

10k+ parts

-

559

$1.696

-

-

-

Parana Technologies

USA . 411 parts In-Stock

1+ parts

$6.849

100+ parts

-

1k+ parts

$7.478

10k+ parts

-

411

$6.849

-

$7.478

-

DigiPath Technology Company

USA . 41 parts In-Stock

1+ parts

$7.542

100+ parts

$6.939

1k+ parts

-

10k+ parts

-

41

$7.542

$6.939

-

-

ChromeModa Solutions

Germany . 4,324 parts In-Stock

1+ parts

$7.696

100+ parts

$6.311

1k+ parts

-

10k+ parts

-

4,324

$7.696

$6.311

-

-

IDEA Electronic Components Group

UK . 2,242 parts In-Stock

1+ parts

$7.696

100+ parts

-

1k+ parts

$6.926

10k+ parts

-

2,242

$7.696

-

$6.926

-

Lixinc

USA . 11,138 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,138

-

-

-

-

Overview

Elevate your power management systems with the Texas Instruments UCC5310MCD MOSFET Gate Driver. Designed with precision and reliability in mind, this high-quality product offers built-in protections for transient and under-voltage scenarios, ensuring optimal performance even in the most demanding applications. With a compact package style and dual terminal position, this driver is perfect for automotive-grade environments where efficiency and durability are essential. Trust in Texas Instruments to provide cutting-edge solutions that deliver unparalleled value and benefits to customers seeking top-of-the-line technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and lightweight packaging for the gate driver, ensuring longevity and ease of installation.

Maximum Supply Voltage: 15 V

Suitable for applications requiring a maximum supply voltage of up to 15 V.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

Enhanced protection features ensure the safe operation of the MOSFET gate driver and connected components.

Maximum Output Current: 2.2 A

Capable of delivering up to 2.2 A output current, making it suitable for driving MOSFETs in various applications.

Maximum Operating Temperature: 125 °C

Can operate effectively in high-temperature environments, ideal for automotive and industrial applications.

Technical Specifications

MOSFET Gate Drivers UCC5310MCD attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

7.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

2.2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.8 mm

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

13.2 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.075 us

Turn-on Time:

.075 us

Width:

5.85 mm

Trade Compliance

UCC5310MCD Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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