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UCC27322PE4

Texas Instruments

UCC27322PE4 by Texas Instruments

UCC27322PE4 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 15V and output current of 9A. It features a totem-pole output characteristic, suitable for industrial applications requiring fast turn-on/off times (0.07us) and operating temperatures ranging from -40°C to 105°C.

Median Price

$2.595

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 256 parts In-Stock

1+ parts

$3.630

100+ parts

$1.970

1k+ parts

$1.130

10k+ parts

-

256

$3.630

$1.970

$1.130

-

Rochester

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$1.560

1k+ parts

$1.290

10k+ parts

$1.150

100

-

$1.560

$1.290

$1.150

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,637 parts In-Stock

1+ parts

$0.871

100+ parts

-

1k+ parts

-

10k+ parts

-

3,637

$0.871

-

-

-

Vyrian

USA . 6,707 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,707

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,723 parts In-Stock

1+ parts

$0.825

100+ parts

-

1k+ parts

-

10k+ parts

-

2,723

$0.825

-

-

-

Parana Technologies

USA . 1,017 parts In-Stock

1+ parts

$9.409

100+ parts

-

1k+ parts

$10.025

10k+ parts

-

1,017

$9.409

-

$10.025

-

DigiPath Technology Company

USA . 2,272 parts In-Stock

1+ parts

$10.361

100+ parts

$9.532

1k+ parts

-

10k+ parts

-

2,272

$10.361

$9.532

-

-

ChromeModa Solutions

Germany . 3,461 parts In-Stock

1+ parts

$10.572

100+ parts

$8.669

1k+ parts

-

10k+ parts

-

3,461

$10.572

$8.669

-

-

IDEA Electronic Components Group

UK . 1,545 parts In-Stock

1+ parts

$10.572

100+ parts

$10.043

1k+ parts

$9.515

10k+ parts

-

1,545

$10.572

$10.043

$9.515

-

Perfect Parts

USA . 56 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56

-

-

-

-

Overview

Elevate your system's performance with the UCC27322PE4 MOSFET Gate Driver from Texas Instruments. Crafted with precision and expertise, this product offers unmatched quality and reliability for a wide range of applications. Whether you're looking to enhance power efficiency or optimize switching speeds, this driver delivers exceptional value by providing seamless control and protection for your circuitry. Trust in Texas Instruments to elevate your designs with cutting-edge technology and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components, ensuring reliable operation and longevity.

Maximum Supply Voltage: 15 V

Can handle higher voltage inputs, making it suitable for a variety of applications without risk of damage.

Package Shape: RECTANGULAR

Allows for easy integration into different circuit layouts and setups.

Power Supplies (V): 4.5/15

Can operate within a wide range of supply voltages, offering flexibility in different power scenarios.

No. of Terminals: 8

Sufficient terminals for connections, enabling easy installation and setup.

Package Style (Meter): IN-LINE

Compact in-line design saves space and simplifies installation in crowded circuit boards or systems.

Minimum Supply Voltage: 4.5 V

Can operate at low supply voltages, saving energy and making it versatile in different power setups.

Maximum Operating Temperature: 105 °C

Capable of operating in high-temperature environments without performance degradation, suitable for industrial applications.

Output Characteristics: TOTEM-POLE

Efficient output design for driving MOSFETs, providing reliable switching performance.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold conditions, enhancing its usability in a wide range of environments.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality finish for terminals ensures good conductivity and corrosion resistance, enhancing the product's reliability.

Terminal Position: DUAL

Dual terminal configuration for each connection point offers redundancy and improves reliability of connections.

Maximum Seated Height: 5.08 mm

Low-profile design for minimal space requirements, allowing for compact system integration.

Width: 7.62 mm

Compact width for fitting into tight spaces or alongside other components in a circuit setup.

Length: 9.81 mm

Optimal length for providing necessary space for component connections and circuit layout.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments, ensuring reliable operation in demanding conditions.

Maximum Output Current: 9 A

High output current capacity for driving MOSFETs, enabling robust performance in power circuits.

Technology: BICMOS

Utilizes a combination of bipolar and CMOS technologies for efficient power management and signal processing.

Terminal Form: THROUGH-HOLE

Through-hole terminals for secure and reliable connections, suitable for various circuit board mounting methods.

Maximum Supply Current: 0.65 mA

Low supply current requirement for efficient power usage and reduced heat generation.

Nominal Supply Voltage: 14 V

Stable nominal supply voltage for consistent performance in varying operating conditions.

Turn-on Time: 0.07 us

Fast turn-on time for quick MOSFET switching, leading to improved system response times.

Terminal Pitch: 2.54 mm

Standard terminal pitch for compatibility with common connectors and circuit board layouts.

Nominal Output Peak Current Limit: 9 A

Provides a high peak current limit for handling surge currents and ensuring MOSFET protection.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Versatile interface IC type for driving MOSFETs with flexibility to suit various application requirements.

Turn-off Time: 0.07 us

Fast turn-off time for precise control of MOSFET switching, contributing to efficient power management.

Technical Specifications

MOSFET Gate Drivers UCC27322PE4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.81 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

9 A

Nominal Output Peak Current Limit:

9 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

4.5/15

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.65 mA

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

14 V

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Turn-off Time:

.07 us

Turn-on Time:

.07 us

Width:

7.62 mm

Trade Compliance

UCC27322PE4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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