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UC3906DWTRG4

Texas Instruments

UC3906DWTRG4 by Texas Instruments

UC3906DWTRG4 by Texas Instruments is a Power Management IC with 16 terminals, operating b/w -20 to 70°C. It supports supply voltages from 5V to 40V and has a small outline package shape for surface mount applications. Ideal for power supply support circuits in commercial-grade electronics.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 35,710 parts In-Stock

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Vyrian

USA . 7,466 parts In-Stock

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Digiode

USA . 3,140 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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One Stop Electronics

USA . 1,538 parts In-Stock

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$1.500

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$1.500

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Ampacity Inc.

Singapore . 335 parts In-Stock

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$1.500

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Semicontronic

India . 641 parts In-Stock

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$3.500

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$3.412

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$3.395

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$3.500

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Parana Technologies

USA . 1,467 parts In-Stock

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$10.074

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$10.628

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AZTECH Wire

Italy . 671 parts In-Stock

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$11.070

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ChromeModa Solutions

Germany . 5,958 parts In-Stock

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$11.319

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$9.282

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IDEA Electronic Components Group

UK . 412 parts In-Stock

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$10.753

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$10.187

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Corohmni

South Africa . 21 parts In-Stock

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Microchip USA

USA . 4,532 parts In-Stock

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Argo Parts USA

USA . 3,819 parts In-Stock

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Continental Prestige Electronics

USA . 3,056 parts In-Stock

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DigiPath Technology Company

USA . 1,807 parts In-Stock

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Corphita

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Advanced Electronics

New Zealand . 72 parts In-Stock

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Bastille Electronics

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Overview

Elevate your power management solutions with the UC3906DWTRG4 from Texas Instruments. Crafted with precision and expertise, this Power Management IC offers unparalleled reliability and efficiency for a wide range of applications. From industrial to automotive, this small outline package delivers optimal performance with a nominal supply voltage of 10V and a maximum supply voltage of 40V. With its nickel palladium gold terminal finish and dual terminal position, this product ensures seamless integration and long-lasting durability. Trust in Texas Instruments to provide cutting-edge technology that exceeds expectations and elevates your projects to new heights. Choose the UC3906DWTRG4 for unmatched quality and performance in power management ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and cost-effective, making the product reliable for long-term use.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and effort.

Nominal Supply Voltage (Vsup): 10 V

The 10V supply voltage is suitable for a wide range of applications, providing flexibility in usage.

No. of Terminals: 16

Having 16 terminals allows for multiple connections and functions, enhancing the versatility of the product.

Width (mm): 7.5 mm

The compact width of 7.5mm makes the product suitable for space-constrained applications.

Minimum Supply Voltage (Vsup): 5 V

The minimum supply voltage of 5V ensures compatibility with a variety of power sources.

Technical Specifications

Power Management ICs UC3906DWTRG4 attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

40 V

Minimum Supply Voltage (Vsup):

5 V

Nominal Supply Voltage (Vsup):

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

7.5 mm

Trade Compliance

UC3906DWTRG4 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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