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TS3USB31RSERG4

Texas Instruments

TS3USB31RSERG4 by Texas Instruments

TS3USB31RSERG4 by Texas Instruments is a 2-channel DPDT switch with 8 terminals, operating at -40 to 85°C. It features a low on-state resistance of 10 ohm and fast switching times of 30 ns. Ideal for industrial applications requiring high bandwidth (1220 kHz) and minimal supply current (0.001 mA).

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 402,100 parts In-Stock

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Vyrian

USA . 6,645 parts In-Stock

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Digiode

USA . 2,218 parts In-Stock

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Semicontronic

India . 1,634 parts In-Stock

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$5.500

100+ parts

$5.362

1k+ parts

$5.335

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1,634

$5.500

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One Stop Electronics

USA . 1,451 parts In-Stock

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$6.500

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Ampacity Inc.

Singapore . 326 parts In-Stock

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$7.500

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$7.500

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AZTECH Wire

Italy . 565 parts In-Stock

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$8.737

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$8.737

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Parana Technologies

USA . 550 parts In-Stock

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$13.389

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$13.907

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$13.389

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ChromeModa Solutions

Germany . 5,245 parts In-Stock

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$15.044

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$12.336

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$15.044

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IDEA Electronic Components Group

UK . 55 parts In-Stock

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$15.044

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$14.292

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$13.540

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55

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A-Z Elektronik GmbH

Germany . 7,427 parts In-Stock

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Corphita

USA . 2,351 parts In-Stock

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Microchip USA

USA . 1,858 parts In-Stock

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DigiPath Technology Company

USA . 895 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Overview

Upgrade your electronics with the TS3USB31RSERG4 by Texas Instruments, a high-quality multiplexer that offers seamless switching capabilities for various applications. With a package style of CHIP CARRIER and a very thin profile, this switch is perfect for space-constrained designs. The Texas Instruments name ensures reliability and superior performance, making it a valuable addition to any project. Experience the benefits of smooth operation, low on-state resistance, and industrial-grade temperature tolerance. Trust in Texas Instruments for all your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides a lightweight and durable construction for the product.

Nominal Supply Voltage (Vsup): 3.3 V

Operates at a commonly used supply voltage, making it compatible with many systems and applications.

Maximum Operating Temperature: 85 °C

Can handle high temperatures, suitable for industrial environments.

Maximum On-state Resistance (Ron): 10 ohm

Low on-state resistance ensures minimal signal loss and efficient performance.

No. of Channels: 2

Provides multiple channels for versatile routing and switching capabilities.

Technical Specifications

Multiplexers & Switches TS3USB31RSERG4 attributes and parameters. Explore more Multiplexers & Switches devices from Texas Instruments

Specs

Other IC type:

Nominal Bandwidth:

1220 kHz

Maximum Input Voltage:

4.3 V

Minimum Input Voltage:

0 V

JESD-30 Code:

S-PQCC-N8

JESD-609 Code:

e4

Length:

1.5 mm

Moisture Sensitivity Level (MSL):

1

Normal Position (V):

NC

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Nominal Off-state Isolation:

30 dB

Nominal On-state Resistance Match:

.35 ohm

Maximum On-state Resistance (Ron):

10 ohm

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

.6 mm

Maximum Supply Current (Isup):

.001 mA

Maximum Supply Voltage (Vsup):

4.3 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Maximum Switch-off Time:

25 ns

Maximum Switch-on Time:

30 ns

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.5 mm

Trade Compliance

TS3USB31RSERG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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