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TPS2811QPWRQ1

Texas Instruments

TPS2811QPWRQ1 by Texas Instruments

TPS2811QPWRQ1 by Texas Instruments is a MOSFET Gate Driver with 2 channels, 10V supply voltage, and 2A output current. Ideal for automotive applications due to AEC-Q100 screening level, it features a small outline package and operates b/w -40°C to 125°C. The driver offers inverted output polarity and gated Schmitt trigger input characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,084 parts In-Stock

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Digiode

USA . 1,533 parts In-Stock

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ComSIT Distribution GmbH

Germany . 74 parts In-Stock

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AZTECH Wire

Italy . 859 parts In-Stock

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$7.078

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Parana Technologies

USA . 419 parts In-Stock

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$11.788

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$12.188

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DigiPath Technology Company

USA . 2,144 parts In-Stock

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$12.980

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ChromeModa Solutions

Germany . 2,445 parts In-Stock

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$13.245

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$10.861

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IDEA Electronic Components Group

UK . 411 parts In-Stock

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$13.245

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$12.583

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$11.920

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One Stop Electronics

USA . 1,107 parts In-Stock

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$27.500

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A-Z Elektronik GmbH

Germany . 6,794 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,276 parts In-Stock

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Corphita

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Overview

Enhance the performance of your automotive applications with the TPS2811QPWRQ1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers high-quality MOSFET Gate Drivers that provide reliable and efficient power management solutions. This small outline package offers inverted output polarity, dual terminal position, and a totem-pole output characteristic for optimal performance. With a nominal supply voltage of 10V and a maximum output current of 2A, this automotive-grade technology ensures seamless operation and precise control. Trust Texas Instruments to elevate your designs with cutting-edge components that deliver exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for automotive applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient assembly of the product on circuit boards.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the product meets automotive industry standards for reliability and performance.

Power Supplies (V): 10

With a power supply of 10V, this MOSFET gate driver can support a variety of applications within the specified voltage range.

Width: 3mm

The compact width of 3mm makes this gate driver suitable for space-constrained applications.

Maximum Output Current: 2A

The high maximum output current of 2A allows the gate driver to drive MOSFETs with higher power requirements.

Technology: BICMOS

The BICMOS technology used in this gate driver combines the advantages of both Bipolar and CMOS technologies, offering high-performance and efficiency.

Input Characteristics: GATED SCHMITT TRIGGER

The gated Schmitt trigger input characteristics provide hysteresis in the input signal, ensuring robust and noise-immune operation.

Technical Specifications

MOSFET Gate Drivers TPS2811QPWRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

GATED SCHMITT TRIGGER

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

2 A

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.005 mA

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

3 mm

Trade Compliance

TPS2811QPWRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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