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TPS2829DBVRG4

Texas Instruments

TPS2829DBVRG4 by Texas Instruments

TPS2829DBVRG4 by Texas Instruments is a MOSFET gate driver with a supply voltage range of 4-14V and output current up to 2A. It features a small outline package, totem-pole output, and automotive temperature grade. Ideal for applications requiring high side drivers in automotive electronics due to its fast turn-on/off times and low supply current consumption.

Median Price

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4

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1k+

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Chip Stock

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Vyrian

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Digiode

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Nova Conductors

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Ampacity Inc.

Singapore . 794 parts In-Stock

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$1.500

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Parana Technologies

USA . 814 parts In-Stock

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$2.278

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DigiPath Technology Company

USA . 1,504 parts In-Stock

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$2.509

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$2.308

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ChromeModa Solutions

Germany . 2,611 parts In-Stock

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$2.560

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$2.099

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IDEA Electronic Components Group

UK . 1,466 parts In-Stock

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$2.304

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AZTECH Wire

Italy . 406 parts In-Stock

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Component Stockers USA

USA . 5,523 parts In-Stock

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One Stop Electronics

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Kepictronics

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Continental Prestige Electronics

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Corphita

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Microchip USA

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Overview

Unlock the full potential of your power management system with the TPS2829DBVRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality MOSFET Gate Drivers that are essential for a wide range of applications. This small outline, shrink-pitch package provides true output polarity and a high side driver, making it ideal for automotive use. With a fast turn-on and turn-off time, this buffer-based driver offers a maximum output current of 2A, ensuring reliable performance under demanding conditions. Trust Texas Instruments to provide innovative solutions that exceed expectations and elevate your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and longevity are important factors.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation, making this product suitable for compact or space-constrained designs.

Maximum Supply Voltage: 14 V

With a high maximum supply voltage, this gate driver can handle higher voltage applications, providing flexibility and versatility in various electronic systems.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and placement on a circuit board, ensuring convenient and efficient assembly.

Power Supplies (V): 10

The product operating at 10V power supplies offers stability and reliability, making it a dependable choice for different electrical requirements.

No. of Terminals: 5

The five terminals provide sufficient connections for interfacing with other components, facilitating seamless integration into a circuit.

Package Style (Meter): SMALL OUTLINE, SHRINK PITCH

The small outline and shrink pitch package style saves space on a PCB, making it suitable for designs with limited real estate.

Minimum Supply Voltage: 4 V

The low minimum supply voltage requirement ensures compatibility with a wide range of power sources, enhancing the product's versatility.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand elevated temperatures, ensuring reliable performance in harsh environments.

Output Characteristics: TOTEM-POLE

The totem-pole output characteristics provide efficient driving of MOSFETs, enhancing the gate driver's overall performance and effectiveness.

Minimum Operating Temperature: -40 °C

The product's ability to operate at low temperatures enables its use in diverse environments, making it a reliable choice for various applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish offers excellent conductivity and corrosion resistance, ensuring long-term reliability and performance.

Terminal Position: DUAL

The dual terminal position provides flexibility in installation and connection options, enhancing the product's adaptability to different configurations.

Maximum Seated Height: 1.45 mm

The low maximum seated height allows for a compact and slim profile, making this gate driver suitable for space-constrained designs.

Width: 1.65 mm

The narrow width of the gate driver contributes to space-saving and compact circuit layouts, making it a practical choice for compact electronic systems.

Output Polarity: TRUE

The true output polarity simplifies the interface with other components, ensuring seamless integration and operation in various circuit configurations.

High Side Driver: YES

The inclusion of a high side driver simplifies the design and operation of the gate driver in applications that require high-side switching capabilities.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this gate driver can withstand reflow soldering processes, ensuring easy and reliable assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures the gate driver's reliability and integrity during the soldering process, making it a robust choice for manufacturing.

Length: 2.9 mm

The compact length of the gate driver contributes to a space-efficient design, making it suitable for applications where size constraints are a consideration.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade designation indicates that this gate driver meets the rigorous requirements for automotive applications, ensuring reliability in automotive systems.

Maximum Output Current: 2 A

With a high maximum output current capacity, this gate driver can drive high-power MOSFETs effectively, making it a suitable choice for demanding applications.

Technology: BICMOS

The BICMOS technology used in this gate driver combines the advantages of bipolar and CMOS technologies, offering optimized performance and efficiency.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical stability and ease of soldering, simplifying the assembly process and ensuring reliable connections.

Maximum Supply Current: 0.015 mA

The low maximum supply current requirement minimizes power consumption, making this gate driver energy-efficient and suitable for battery-powered applications.

Nominal Supply Voltage: 10 V

The product's nominal 10V supply voltage ensures stable and consistent operation, making it a reliable choice for various electronic systems.

Turn-on Time: 0.05 us

The fast turn-on time of 0.05 microseconds enables quick and precise switching of MOSFETs, enhancing the gate driver's performance in high-speed applications.

Terminal Pitch: 0.95 mm

The narrow terminal pitch facilitates precise connections and compact layout designs, making this gate driver suitable for densely populated circuit boards.

Nominal Output Peak Current Limit: 2 A

The nominal output peak current limit of 2A ensures reliable and consistent performance, protecting the gate driver and connected components from overcurrent conditions.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The buffer or inverter-based MOSFET driver interface IC type offers versatility and compatibility in various circuit configurations, making this gate driver suitable for a wide range of applications.

Turn-off Time: 0.05 us

The fast turn-off time of 0.05 microseconds helps prevent shoot-through and improves efficiency in high-frequency switching applications.

Technical Specifications

MOSFET Gate Drivers TPS2829DBVRG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.015 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

1.65 mm

Trade Compliance

TPS2829DBVRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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