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TPS2829DBVTG4

Texas Instruments

TPS2829DBVTG4 by Texas Instruments

TPS2829DBVTG4 by Texas Instruments is a MOSFET Gate Driver with 10V power supplies, 14V max supply voltage, and 2A max output current. It is used in automotive applications due to its BICMOS technology, -40 to 125 °C operating temperature range, and TRUE output polarity.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 17,760 parts In-Stock

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Vyrian

USA . 4,829 parts In-Stock

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Digiode

USA . 1,764 parts In-Stock

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Cogito LLC

Ukraine . 105 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Corohmni

South Africa . 492 parts In-Stock

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$8.416

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$8.416

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Parana Technologies

USA . 594 parts In-Stock

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$10.343

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$10.862

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DigiPath Technology Company

USA . 120 parts In-Stock

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$11.389

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$10.477

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$11.389

$10.477

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ChromeModa Solutions

Germany . 6,323 parts In-Stock

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$11.621

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$9.529

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IDEA Electronic Components Group

UK . 684 parts In-Stock

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$11.621

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$11.040

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$10.459

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AZTECH Wire

Italy . 299 parts In-Stock

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$14.065

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Ampacity Inc.

Singapore . 1,374 parts In-Stock

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$25.500

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One Stop Electronics

USA . 570 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

Canada . 6,399 parts In-Stock

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Microchip USA

USA . 4,926 parts In-Stock

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Argo Parts USA

USA . 3,247 parts In-Stock

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Corphita

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Experience superior performance and reliability with the TPS2829DBVTG4 MOSFET Gate Driver by Texas Instruments. Designed with cutting-edge BICMOS technology, this automotive-grade driver offers true output polarity, high side driving capabilities, and a compact small outline package for space-saving installation. Ideal for a wide range of applications, this versatile driver provides a maximum output current of 2A and fast turn-on/off times for efficient operation. Trust Texas Instruments for quality engineering and innovative solutions that deliver unmatched value to customers seeking high-performance gate drivers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Maximum Supply Voltage: 14 V

Allows for a wider range of input voltages, increasing the versatility of the product.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving time and effort during assembly.

Output Polarity: TRUE

Ensures correct polarity for the output signal, preventing damage to connected components.

Turn-on Time: 0.05 us

Provides fast response times for switching operations, improving the overall performance of the product.

Technical Specifications

MOSFET Gate Drivers TPS2829DBVTG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.45 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.015 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

1.65 mm

Trade Compliance

TPS2829DBVTG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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