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TPS2812DRG4

Texas Instruments

TPS2812DRG4 by Texas Instruments

TPS2812DRG4 by Texas Instruments is a MOSFET gate driver with 2 functions, operating at 10V power supply. It features a max supply voltage of 14V, output polarity is TRUE, and has an interface IC type of NAND GATE BASED MOSFET DRIVER. This automotive-grade driver has a turn-on/off time of 0.05 us and can handle a max output current of 2A, making it suitable for various automotive applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,140 parts In-Stock

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4,140

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Digiode

USA . 3,140 parts In-Stock

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3,140

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Parana Technologies

USA . 169 parts In-Stock

1+ parts

$4.619

100+ parts

-

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$5.090

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169

$4.619

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$5.090

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DigiPath Technology Company

USA . 836 parts In-Stock

1+ parts

$5.086

100+ parts

$4.679

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836

$5.086

$4.679

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IDEA Electronic Components Group

UK . 1,801 parts In-Stock

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$5.190

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$4.671

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$5.190

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$4.671

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ChromeModa Solutions

Germany . 1,421 parts In-Stock

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$5.190

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$4.256

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$5.190

$4.256

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One Stop Electronics

USA . 569 parts In-Stock

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$7.500

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569

$7.500

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Corohmni

South Africa . 289 parts In-Stock

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$11.421

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289

$11.421

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AZTECH Wire

Italy . 655 parts In-Stock

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$13.831

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$13.831

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Ampacity Inc.

Singapore . 1,230 parts In-Stock

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$16.500

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Component Stockers USA

USA . 602 parts In-Stock

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$99.990

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Kepictronics

USA . 43,500 parts In-Stock

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GreenTree Electronics

Israel . 8,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,747 parts In-Stock

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Argo Parts USA

USA . 3,748 parts In-Stock

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Corphita

USA . 3,394 parts In-Stock

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Microchip USA

USA . 1,037 parts In-Stock

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Continental Prestige Electronics

USA . 943 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Elevate your power management solutions with the TPS2812DRG4 by Texas Instruments. As a trusted name in semiconductor manufacturing, Texas Instruments delivers top-notch quality and reliability that you can count on. This MOSFET Gate Driver is perfect for a variety of applications, offering high performance and efficiency. With its dual function design and true output polarity, this small outline package provides customers with exceptional value and benefits. Experience seamless operation with the TPS2812DRG4 and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the internal components of the gate driver.

Maximum Supply Voltage: 14 V

Allows for a wide range of input voltage options, increasing the versatility of the gate driver.

Output Characteristics: TOTEM-POLE

This output configuration offers high efficiency and fast switching capabilities, making it suitable for high-speed applications.

Temperature Grade: AUTOMOTIVE

Designed to withstand automotive-grade operating temperatures, ensuring reliable performance in harsh environments.

Technology: BIMOS

Combines the benefits of bipolar and MOSFET technologies, providing high power efficiency and fast switching speeds.

Technical Specifications

MOSFET Gate Drivers TPS2812DRG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 8V TO 40 V REGULATOR INPUT SUPPLY

High Side Driver:

YES

Input Characteristics:

SCHMITT TRIGGER

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

2 A

Nominal Output Peak Current Limit:

2 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

10

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.005 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

4 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Technology:

BIMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.05 us

Turn-on Time:

.05 us

Width:

3.9 mm

Trade Compliance

TPS2812DRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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