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TMS320DM648CUTD9

Texas Instruments

TMS320DM648CUTD9 by Texas Instruments

TMS320DM648CUTD9 by Texas Instruments is a 32-bit DSP with 900 MHz clock frequency, 520 terminals, and 1.26V max supply voltage. Ideal for industrial applications requiring high-speed data processing, it features integrated cache, 8 DMA channels, and low power mode for efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,693 parts In-Stock

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Digiode

USA . 2,567 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 536 parts In-Stock

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$10.446

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One Stop Electronics

USA . 1,329 parts In-Stock

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$21.000

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Parana Technologies

USA . 2,071 parts In-Stock

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$33.919

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$137.277

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DigiPath Technology Company

USA . 1,982 parts In-Stock

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$37.349

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$34.361

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ChromeModa Solutions

Germany . 4,082 parts In-Stock

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$38.111

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$31.251

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IDEA Electronic Components Group

UK . 359 parts In-Stock

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$38.111

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$36.205

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$34.300

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Corohmni

South Africa . 83 parts In-Stock

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$68.093

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Corphita

USA . 4,591 parts In-Stock

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Microchip USA

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Overview

Experience unparalleled performance and efficiency with the TMS320DM648CUTD9 by Texas Instruments, a top-tier manufacturer known for delivering high-quality digital signal processors. Designed for a wide range of applications, this DSP boasts integrated cache, low power mode, and a maximum clock frequency of 900 MHz, making it ideal for demanding tasks. With 64 DMA channels and a multitude of timers, this product offers unmatched value and benefits to customers looking for reliable and advanced processing solutions. Unlock the potential of your projects with the TMS320DM648CUTD9.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it suitable for portable and rugged applications.

Integrated Cache: YES

The integrated cache helps in improving processing speed by storing frequently accessed data, enhancing overall performance of the DSP.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly on circuit boards, saving space and simplifying production processes.

Maximum Supply Voltage: 1.26 V

The low maximum supply voltage makes the DSP energy efficient and suitable for applications where power consumption is a concern.

On Chip Data RAM Width: 8

The width of on-chip data RAM ensures efficient data processing and storage, improving the overall performance of the DSP.

Address Bus Width: 14

The wide address bus width allows for efficient memory addressing and data transfer within the DSP, enhancing its processing capabilities.

Package Shape: SQUARE

The square package shape makes the DSP easy to integrate into various electronic devices and circuit layouts, offering flexibility in design.

Bit Size: 32

With a 32-bit architecture, the DSP can handle complex calculations and data processing tasks with high precision and speed.

Power Supplies (V): 1.2, 1.8, 3.3

The availability of multiple power supply options gives flexibility in powering the DSP according to system requirements and power efficiency needs.

No. of Terminals: 520

Having a high number of terminals allows for more connectivity options and integration with other system components, enhancing the versatility of the DSP.

Technical Specifications

Digital Signal Processors (DSPs) TMS320DM648CUTD9 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

14

Barrel Shifter:

NO

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

900 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

YES

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B520

JESD-609 Code:

e1

Length:

19 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of DMA Channels:

64

No. of Terminals:

520

No. of Timers:

8

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA529,23X23,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

245

Power Supplies (V):

1.2,1.8,3.3

Qualification:

Not Qualified

RAM Words:

8192

ROM Programmability:

MROM

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

19 mm

Peripheral IC Type:

Trade Compliance

TMS320DM648CUTD9 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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