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TMS320DM6435ZDUQ6

Texas Instruments

TMS320DM6435ZDUQ6 by Texas Instruments

TMS320DM6435ZDUQ6 by Texas Instruments is a 32-bit DSP with integrated cache and 20480 RAM words. It operates at temperatures from -40 to 125 °C, suitable for automotive applications. With 72 DMA channels and boundary scan support, it offers high performance in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,711 parts In-Stock

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Digiode

USA . 872 parts In-Stock

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Ampacity Inc.

Singapore . 1,331 parts In-Stock

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$1.000

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$1.000

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Microchip USA

USA . 282 parts In-Stock

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$8.570

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$8.550

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$8.550

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$8.520

282

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$8.550

$8.520

Parana Technologies

USA . 948 parts In-Stock

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$15.148

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$1,406.703

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$13.633

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948

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$1,406.703

$13.633

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AZTECH Wire

Italy . 726 parts In-Stock

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$15.183

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DigiPath Technology Company

USA . 1,057 parts In-Stock

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$16.680

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ChromeModa Solutions

Germany . 2,341 parts In-Stock

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$17.020

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$13.956

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IDEA Electronic Components Group

UK . 2,277 parts In-Stock

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$17.020

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$16.169

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$15.318

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One Stop Electronics

USA . 804 parts In-Stock

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$33.000

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Corohmni

South Africa . 1,984 parts In-Stock

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$38.601

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Corphita

USA . 3,984 parts In-Stock

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Overview

Elevate your digital signal processing capabilities with the TMS320DM6435ZDUQ6 by Texas Instruments. Crafted with precision and expertise, this DSP offers unparalleled performance in a wide range of applications. From automotive to industrial, this powerhouse delivers exceptional quality and reliability, thanks to its integrated cache and advanced technology. With a variety of power supplies and multiple timers, the TMS320DM6435ZDUQ6 ensures seamless operation at any temperature. Trust Texas Instruments to provide cutting-edge solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Integrated Cache: YES

Having an integrated cache improves the overall performance and efficiency of the DSP.

Maximum Supply Voltage: 1.26 V

The maximum supply voltage of 1.26 V ensures safe and reliable operation.

Surface Mount: YES

Being surface mountable makes the DSP easy to integrate into various electronic applications.

Address Bus Width: 13

With a wide address bus width of 13, the DSP can handle large amounts of data efficiently.

Bit Size: 32

The 32-bit architecture provides high processing power and accuracy.

Power Supplies (V): 1.2,1.8,3.3

Supporting multiple power supply voltages enables flexibility in different system configurations.

No. of Terminals: 376

Having a high number of terminals allows for connectivity to various other components.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliability in a wide range of environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the DSP to function in extreme cold conditions.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high-speed performance.

Temperature Grade: AUTOMOTIVE

Being automotive grade means the DSP meets stringent requirements for reliability in automotive applications.

Technical Specifications

Digital Signal Processors (DSPs) TMS320DM6435ZDUQ6 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

13

Barrel Shifter:

NO

Bit Size:

32

Boundary Scan:

YES

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

YES

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B376

JESD-609 Code:

e1

Low Power Mode:

NO

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

72

No. of Terminals:

376

No. of Timers:

5

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA376,22X22,40

Package Shape:

Package Style (Meter):

GRID ARRAY, HEAT SINK/SLUG

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,1.8,3.3

Qualification:

Not Qualified

RAM Words:

20480

ROM Programmability:

MROM

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Peripheral IC Type:

Trade Compliance

TMS320DM6435ZDUQ6 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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