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TMS320C30GELSD

Texas Instruments

TMS320C30GELSD by Texas Instruments

TMS320C30GELSD by Texas Instruments is a 32-bit DSP with 24-bit address bus, operating at 5V. It features a ceramic-metal package and operates b/w 0-70°C. Ideal for commercial applications requiring high-speed signal processing in digital systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,013 parts In-Stock

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Digiode

USA . 1,548 parts In-Stock

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Nova Conductors

Japan . 64 parts In-Stock

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AZTECH Wire

Italy . 499 parts In-Stock

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$10.053

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Ampacity Inc.

Singapore . 1,275 parts In-Stock

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$12.000

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One Stop Electronics

USA . 908 parts In-Stock

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Parana Technologies

USA . 2,164 parts In-Stock

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$33.130

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$119.401

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ChromeModa Solutions

Germany . 2,367 parts In-Stock

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$37.225

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$30.524

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IDEA Electronic Components Group

UK . 1,606 parts In-Stock

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$37.225

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$35.364

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$33.502

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Corohmni

South Africa . 2,570 parts In-Stock

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Continental Prestige Electronics

USA . 3,615 parts In-Stock

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Corphita

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Argo Parts USA

USA . 2,279 parts In-Stock

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DigiPath Technology Company

USA . 744 parts In-Stock

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Microchip USA

USA . 422 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the TMS320C30GELSD by Texas Instruments, a leading manufacturer in the industry. This state-of-the-art Digital Signal Processor (DSP) is designed to optimize applications in various industries, offering unmatched value and benefits to customers. With its advanced technology and superior quality, this product ensures seamless operation and maximum efficiency. Embrace the future of signal processing with the TMS320C30GELSD and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

Provides durability and reliability, ensuring the product will withstand harsh operating conditions.

Maximum Supply Voltage: 5.25 V

Allows for a high supply voltage tolerance, making the product suitable for a variety of power supply configurations.

Address Bus Width: 24

Provides a wide address bus width, allowing for efficient memory addressing and data access.

No. of Terminals: 181

Offers a high number of terminals, enabling connectivity to a wide range of external components.

External Data Bus Width: 32

Provides a wide external data bus width, allowing for fast data transfer and processing capabilities.

Temperature Grade: COMMERCIAL

Suitable for use in commercial applications, ensuring stable performance within specified temperature ranges.

Technology: CMOS

Utilizes CMOS technology, providing low power consumption and high speed operation.

Format: FLOATING POINT

Supports floating point format, allowing for high precision mathematical calculations.

Barrel Shifter: YES

Includes a barrel shifter, enabling efficient and flexible data manipulation and shifting operations.

Technical Specifications

Digital Signal Processors (DSPs) TMS320C30GELSD attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

24

Barrel Shifter:

YES

Boundary Scan:

NO

External Data Bus Width:

32

Format:

FLOATING POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

X-CPGA-P181

Low Power Mode:

NO

No. of Terminals:

181

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

PGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Position:

PERPENDICULAR

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Peripheral IC Type:

Trade Compliance

TMS320C30GELSD Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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