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TLV5613IPWG4

Texas Instruments

TLV5613IPWG4 by Texas Instruments

TLV5613IPWG4 by Texas Instruments is a 12-bit DAC with max output voltage of 5.1V and settling time of 7us. Ideal for industrial applications, it operates b/w -40 to 85°C, has a sample rate of 0.286MHz, and consumes 3mA supply current.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,729 parts In-Stock

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Digiode

USA . 4,595 parts In-Stock

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EMSNET

USA . 53 parts In-Stock

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AZTECH Wire

Italy . 814 parts In-Stock

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$10.866

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One Stop Electronics

USA . 201 parts In-Stock

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$14.000

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Parana Technologies

USA . 297 parts In-Stock

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$23.790

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$2,209.234

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$21.411

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297

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DigiPath Technology Company

USA . 894 parts In-Stock

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$26.195

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ChromeModa Solutions

Germany . 439 parts In-Stock

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$26.730

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$21.919

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IDEA Electronic Components Group

UK . 23 parts In-Stock

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$26.730

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$25.394

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$24.057

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Component Stockers USA

USA . 655 parts In-Stock

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$99.990

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Corphita

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Microchip USA

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Overview

Upgrade your digital-to-analog conversion experience with the TLV5613IPWG4 by Texas Instruments. This high-quality converter offers precision and reliability, making it perfect for a wide range of applications. Whether you're working on audio equipment, industrial automation, or instrumentation, this versatile product delivers unmatched performance. Trust in Texas Instruments' reputation for excellence and invest in a solution that will bring value to your projects. Unlock new possibilities with the TLV5613IPWG4 today!

Feature Benefit Bullets

Maximum Analog Output Voltage: 5.1 V

Higher maximum output voltage allows for a wider dynamic range and better signal resolution.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and lightweight construction for easy handling.

Surface Mount: YES

Surface mount technology allows for easy installation on circuit boards, saving space and reducing assembly time.

No. of Bits: 12

A higher number of bits results in higher resolution and more accurate conversion of digital signals to analog output.

Maximum Settling Time: 7 us

Fast settling time ensures quick response to input changes, ideal for real-time applications.

Power Supplies (V): 3/5

Support for both 3V and 5V power supplies provides flexibility in system integration.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes this converter suitable for industrial applications in varying environments.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems.

Sample Rate: 0.286 MHz

High sample rate ensures accurate and smooth conversion of digital signals to analog output.

Input Format: PARALLEL, WORD

Support for parallel input format allows for easy connection to digital systems and simplified data transfer.

Technical Specifications

Digital-to-Analog Converters TLV5613IPWG4 attributes and parameters. Explore more Digital-to-Analog Converters devices from Texas Instruments

Converter Specifications

Technology:

CMOS

Sub-Category:

Other Converters

Input Format:

Parallel, Word

Input Bit Code:

Binary

Maximum Linearity Error (EL):

0.0977 %

Nominal Settling Time (tstl):

3.5 µs

Maximum Supply Current:

3 mA

Maximum Settling Time:

7 µs

Sample Rate:

286 kHz

No. of Bits:

12

No. of Functions:

1

Electrical Specifications

Nominal Supply Voltage:

3 V

Minimum Analog Output Voltage:

0 V

Maximum Analog Output Voltage:

5.1 V

Power Supplies:

3/5 V

Operating Conditions

Minimum Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Peak Reflow Temperature:

260 °C (500 °F)

Moisture Sensitivity Level (MSL):

1

Form Factor

No. of Terminals:

20

Terminal Form:

Terminal Position:

Dual

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Surface Mount:

Yes

Width:

0.173 in (4.4 mm)

Length:

0.256 in (6.5 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Code:

Package Equivalence Code:

TSSOP20,.25

Standards and Codes

Qualified:

No

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Trade Compliance

TLV5613IPWG4 Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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