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TLV2352MU

Texas Instruments

TLV2352MU by Texas Instruments

TLV2352MU by Texas Instruments is a dual-function comparator with 10 terminals. It features a max input offset voltage of 10000 uV and operates at temperatures ranging from -55 to 125 °C. Ideal for military-grade applications due to its CMOS technology and low bias current of 0.02 uA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,470 parts In-Stock

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Digiode

USA . 2,888 parts In-Stock

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2,888

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Parana Technologies

USA . 1,818 parts In-Stock

1+ parts

$2.415

100+ parts

$224.312

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$2.174

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1,818

$2.415

$224.312

$2.174

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DigiPath Technology Company

USA . 1,361 parts In-Stock

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$2.660

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$2.660

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ChromeModa Solutions

Germany . 952 parts In-Stock

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$2.714

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$2.225

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952

$2.714

$2.225

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IDEA Electronic Components Group

UK . 807 parts In-Stock

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$2.714

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$2.443

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807

$2.714

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$2.443

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One Stop Electronics

USA . 433 parts In-Stock

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$7.410

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433

$7.410

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AZTECH Wire

Italy . 708 parts In-Stock

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$17.301

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Corphita

USA . 757 parts In-Stock

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Overview

Elevate your electronic designs with the TLV2352MU from Texas Instruments. This high-quality comparator offers precision and reliability in a compact square package. Ideal for military-grade applications, this device boasts a nominal response time of 1400 ns and a maximum input offset voltage of 10000 uV. With a low bias current of 0.02 uA and open-drain output type, the TLV2352MU provides unmatched performance for your projects. Trust in Texas Instruments to deliver top-notch products that exceed expectations. Upgrade your designs today with the TLV2352MU.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and reliability, making the product suitable for harsh environmental conditions.

Maximum Input Offset Voltage: 10,000 uV

The high input offset voltage allows for precise and accurate measurements, making this product ideal for applications requiring high precision.

Maximum Average Bias Current (IIB): 0.02 uA

The low bias current ensures minimal power consumption, making the product energy-efficient.

Surface Mount: YES

The surface mount capability makes installation and assembly easy, saving time and effort.

No. of Functions: 2

Having multiple functions in a single device can save space on a circuit board and reduce overall system complexity.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V makes the product compatible with a wide range of applications requiring low-power operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product reliable and efficient.

Amplifier Type: COMPARATOR

Being a comparator, this product is suitable for applications requiring comparison of two analog signals to determine their relationship.

Technical Specifications

Comparators TLV2352MU attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

20 nA

Maximum Bias Current (IIB) @25 °C:

20 nA

Operational Characteristics

Maximum Supply Current:

400 μA

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

8 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Nominal Response Time:

1.4 µs

Physical Characteristics

Length:

0.245 in (6.225 mm)

Width:

0.245 in (6.225 mm)

Maximum Seated Height:

0.08 in (2.03 mm)

Total Terminals:

10

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Ceramic, Glass-Sealed

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-GDFP-F10

Packaging and Shipping

Package Code:

DFP

Package Shape:

Package Type:

Flatpack

Package Equivalence Code:

DIP8,.3

Trade Compliance

TLV2352MU Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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