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TLV2352MFKB

Texas Instruments

TLV2352MFKB by Texas Instruments

TLV2352MFKB by Texas Instruments is a CMOS COMPARATOR with 2 functions, MILITARY grade, and OPEN-DRAIN output. It has a Max Input Offset Voltage of 10000 uV, Bias Current of 0.02 uA, and Nominal Response Time of 1400 ns. Ideal for applications requiring precise voltage comparisons in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,912 parts In-Stock

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4,912

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Digiode

USA . 3,406 parts In-Stock

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3,406

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,365 parts In-Stock

1+ parts

$2.410

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1,365

$2.410

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Parana Technologies

USA . 279 parts In-Stock

1+ parts

$4.802

100+ parts

-

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$5.310

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279

$4.802

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$5.310

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DigiPath Technology Company

USA . 1,633 parts In-Stock

1+ parts

$5.287

100+ parts

$4.864

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1,633

$5.287

$4.864

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ChromeModa Solutions

Germany . 6,256 parts In-Stock

1+ parts

$5.395

100+ parts

$4.424

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6,256

$5.395

$4.424

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IDEA Electronic Components Group

UK . 1,735 parts In-Stock

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$5.395

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$4.856

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1,735

$5.395

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$4.856

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AZTECH Wire

Italy . 403 parts In-Stock

1+ parts

$6.639

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403

$6.639

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Corphita

USA . 4,585 parts In-Stock

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4,585

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Overview

Experience the precision and reliability of Texas Instruments with the TLV2352MFKB Comparator. This top-of-the-line product offers unparalleled performance in a wide range of applications, from automotive to industrial settings. With its advanced technology and military-grade screening level, you can trust that this comparator will deliver consistent results every time. Invest in quality with Texas Instruments and elevate your projects to new heights of excellence.

Feature Benefit Bullets

Maximum Input Offset Voltage: 10000 uV

High maximum input offset voltage allows for accurate and precise measurement of input signals, making this comparator suitable for applications requiring high precision.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on PCBs, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage of 3V is commonly used in many electronic devices, making this comparator compatible with a wide range of applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this comparator can operate reliably in harsh environments and high temperature conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this comparator energy-efficient and reliable for long-term use.

Technical Specifications

Comparators TLV2352MFKB attributes and parameters. Explore more Comparators devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Comparators

Output Type:

Open-Drain

Performance Specifications

Maximum Input Offset Voltage:

10 mV

Peak Bias Current:

20 nA

Maximum Bias Current (IIB) @25 °C:

20 nA

Operational Characteristics

Maximum Supply Current:

400 μA

Nominal Supply Voltage:

3 V

Maximum Supply Voltage:

8 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Nominal Response Time:

1.4 µs

Physical Characteristics

Length:

0.35 in (8.89 mm)

Width:

0.35 in (8.89 mm)

Maximum Seated Height:

0.08 in (2.03 mm)

Total Terminals:

20

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Quad

Terminal Form:

Package Body Material:

Ceramic, Metal-Sealed Cofired

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Qualified:

No

Screening Level:

MIL-STD-883

Standards

JESD-30 Code:

S-CQCC-N20

Packaging and Shipping

Package Code:

Package Shape:

Package Type:

Chip Carrier

Package Equivalence Code:

LCC20,.35SQ

Trade Compliance

TLV2352MFKB Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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