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TLC2933AIPWG4

Texas Instruments

TLC2933AIPWG4 by Texas Instruments

TLC2933AIPWG4 by Texas Instruments is a PLL & Frequency Synthesis Circuit with 110 GHz output freq. Ideal for commercial applications, it operates at -20 to 75°C with Vsup ranging from 2.85V to 3.15V. This CMOS technology IC has a small outline package style and dual terminal position for compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,691 parts In-Stock

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3,691

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Sensible Micro Corp

USA . 2,231 parts In-Stock

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2,231

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Digiode

USA . 255 parts In-Stock

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255

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Distributors (Availability)

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One Stop Electronics

USA . 448 parts In-Stock

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$2.500

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448

$2.500

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Parana Technologies

USA . 1,743 parts In-Stock

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$2.608

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$3.097

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1,743

$2.608

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$3.097

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ChromeModa Solutions

Germany . 5,946 parts In-Stock

1+ parts

$2.930

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$2.403

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5,946

$2.930

$2.403

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IDEA Electronic Components Group

UK . 143 parts In-Stock

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$2.930

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$2.637

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143

$2.930

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$2.637

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AZTECH Wire

Italy . 277 parts In-Stock

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$6.842

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277

$6.842

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Advanced Electronics

New Zealand . 71 parts In-Stock

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$18.567

100+ parts

$16.896

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$15.225

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71

$18.567

$16.896

$15.225

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QUARKTWIN TECHNOLOGY LTD

USA . 16,536 parts In-Stock

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Corphita

USA . 3,865 parts In-Stock

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Microchip USA

USA . 2,030 parts In-Stock

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2,030

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DigiPath Technology Company

USA . 1,187 parts In-Stock

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$2.642

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1,187

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$2.642

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Overview

Unlock the full potential of your electronic devices with the TLC2933AIPWG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments guarantees top-notch quality and reliability. This Phase Locked Loop (PLL) & Frequency Synthesis Circuit offers unparalleled performance and precision, making it the perfect choice for a wide range of applications. With a maximum output frequency of 110 GHz and a compact design, this product provides exceptional value and benefits to customers looking to optimize their systems. Upgrade your technology with the TLC2933AIPWG4 and experience superior functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, reducing production time and costs.

Nominal Supply Voltage (Vsup): 3 V

This voltage level is common in many electronic systems, ensuring compatibility and ease of integration.

Maximum Output Frequency: 110 GHz

The high output frequency makes this product ideal for applications requiring precise and fast signal generation.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and slim design saves space on the PCB, making it suitable for compact electronic devices and systems.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, increasing the efficiency and reliability of the product.

Technical Specifications

Phase Locked Loops (PLL) & Frequency Synthesis Circuits TLC2933AIPWG4 attributes and parameters. Explore more Phase Locked Loops (PLL) & Frequency Synthesis Circuits devices from Texas Instruments

Specs

Other IC type:

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

-20 Cel

Maximum Output Frequency:

110 GHz

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

PLL or Frequency Synthesis Circuits

Maximum Supply Current (Isup):

55 mA

Maximum Supply Voltage (Vsup):

3.15 V

Minimum Supply Voltage (Vsup):

2.85 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4.4 mm

Trade Compliance

TLC2933AIPWG4 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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