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SNJ54HC151J

Texas Instruments

SNJ54HC151J by Texas Instruments

SNJ54HC151J by Texas Instruments is an 8-input multiplexer with a propagation delay of 63ns at 5V. It operates in a temperature range of -55 to 125°C, making it suitable for military-grade applications. With CMOS technology and through-hole terminal form, it offers high performance in a compact package.

Median Price

$10.066

Lifecycle Status

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Chip1Stop

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Freelance Electronics

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Bristol Electronics

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American Microsemiconductor Inc.

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Component Sense

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Electronic Expediters

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Odintec Ltd.

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Mil-Aero Solutions, Inc.

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Beltway Electronics Company

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AZTECH Wire

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Parana Technologies

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DigiPath Technology Company

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ChromeModa Solutions

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IDEA Electronic Components Group

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Overview

Unlock the power of seamless data manipulation with the SNJ54HC151J by Texas Instruments. As a trusted leader in semiconductor innovation, Texas Instruments delivers top-quality multiplexer & demultiplexer solutions that ensure reliability and precision. Ideal for a wide range of applications, this versatile product offers customers unmatched value and performance. Experience the benefits of faster data processing, enhanced efficiency, and simplified operations with the SNJ54HC151J. Trust Texas Instruments to elevate your projects to new heights of success.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed packaging provides durability and reliability, ensuring the safety of the internal components.

Propagation Delay At Nominal Supply: 63 ns

Low propagation delay ensures fast data processing and minimal latency in signal transmission.

Screening Level: MIL-PRF-38535

Compliance with MIL-PRF-38535 standards ensures high-quality and reliable performance in military applications.

No. of Inputs: 8

8 inputs allow for versatile connectivity and compatibility with multiple input sources.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides stable power input for consistent performance.

Load Capacitance (CL): 150 pF

A load capacitance of 150 pF ensures efficient power consumption and compatibility with various external devices.

Power Supplies (V): 2/6

Support for multiple power supply voltages (2V and 6V) enhances versatility and flexibility in different operating environments.

No. of Terminals: 16

16 terminals allow for efficient connectivity and integration within electronic circuits.

Maximum I (ol): 5.2 Amp

High maximum output current of 5.2 Amps supports the transmission of strong and reliable signals.

Minimum Operating Temperature: -55 °C

Wide operating temperature range of -55°C ensures reliable performance even in extreme environmental conditions.

Technical Specifications

Multiplexer & Demultiplexer SNJ54HC151J attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

HC

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

150 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Bits:

8

No. of Functions:

1

No. of Inputs:

8

No. of Outputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

63 ns

Propagation Delay (tpd):

415 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SNJ54HC151J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-200-8141, 5962012008141, 5962-01-248-1555, 5962012481555, 5962-01-266-9982, 5962012669982

NIIN

012008141, 012481555, 012669982

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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