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SN74LVC3G34DCURE4

Texas Instruments

SN74LVC3G34DCURE4 by Texas Instruments

SN74LVC3G34DCURE4 by Texas Instruments is a logic gate with 3 functions, 4.1 ns propagation delay, and 50 pF load capacitance. It operates at a nominal voltage of 3.3V and has a max operating temperature of 85°C. Ideal for industrial applications requiring fast signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 159,700 parts In-Stock

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Vyrian

USA . 8,014 parts In-Stock

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Digiode

USA . 3,480 parts In-Stock

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Nova Conductors

Japan . 75 parts In-Stock

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One Stop Electronics

USA . 799 parts In-Stock

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$6.000

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Parana Technologies

USA . 1,661 parts In-Stock

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$10.905

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$11.376

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ChromeModa Solutions

Germany . 490 parts In-Stock

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$12.253

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$10.047

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IDEA Electronic Components Group

UK . 338 parts In-Stock

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$12.253

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$11.640

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$11.028

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$11.028

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AZTECH Wire

Italy . 537 parts In-Stock

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$14.386

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Corohmni

South Africa . 107 parts In-Stock

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Semicontronic

India . 1,449 parts In-Stock

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Ampacity Inc.

Singapore . 1,442 parts In-Stock

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Argo Parts USA

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Microchip USA

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Continental Prestige Electronics

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Bastille Electronics

Australia . 750 parts In-Stock

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DigiPath Technology Company

USA . 674 parts In-Stock

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Corphita

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Advanced Electronics

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Overview

Experience unmatched performance and reliability with the SN74LVC3G34DCURE4 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-of-the-line logic gates that are essential for a wide range of applications. With a fast propagation delay and low power consumption, this product offers exceptional value and superior functionality to customers. Whether you're designing consumer electronics or industrial equipment, trust in Texas Instruments to provide cutting-edge solutions that meet your needs. Choose the SN74LVC3G34DCURE4 for unparalleled quality and performance in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and cost-effectiveness, making it a practical choice for various applications.

Propagation Delay At Nominal Supply: 4.1 ns

With a low propagation delay, this logic gate ensures fast signal processing, ideal for high-speed circuits.

Surface Mount: YES

The surface mount feature allows for easier PCB assembly and saves space, making it suitable for compact designs.

No. of Functions: 3

Having multiple functions in one component simplifies circuit design and reduces the number of individual components needed.

Package Shape: RECTANGULAR

The rectangular shape offers efficient use of PCB space and allows for easier placement on the board.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a common supply voltage of 3.3V ensures compatibility with a wide range of systems and devices.

Load Capacitance (CL): 50 pF

With a low load capacitance, this logic gate can drive capacitive loads effectively, improving signal integrity.

Power Supplies (V): 3.3

The 3.3V power supply requirement is standard in many applications, making integration seamless in various projects.

No. of Terminals: 8

The 8 terminals provide flexibility in connectivity and allow for versatile circuit configurations.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

This package style offers space-saving benefits, making it suitable for compact electronic devices.

Maximum I (ol): 24 Amp

The high output current capability of 24A ensures robust performance in driving loads, suitable for demanding applications.

Propagation Delay (tpd): 7.9 ns

With a low propagation delay, this logic gate enables fast signal processing, essential for time-critical operations.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for reliable operation in harsh environments or under heavy loads.

Minimum Operating Temperature: -40 °C

With a wide temperature range, this logic gate can function in extreme cold conditions, expanding its usability.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold finish offers excellent corrosion resistance and ensures reliable electrical connections.

Terminal Position: DUAL

The dual terminal position provides flexibility in PCB layout and component orientation, accommodating different design requirements.

Maximum Seated Height: 0.9 mm

The low seated height allows for compact board designs and can contribute to minimizing overall product size.

Width: 2 mm

The compact width of 2mm makes this logic gate suitable for applications with limited board space.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage requirement allows for operation in low-power scenarios, enhancing energy efficiency.

Length: 2.3 mm

The short length of 2.3mm contributes to a compact footprint, ideal for space-constrained applications.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliability and performance in harsh operating conditions common in industrial settings.

Technology: CMOS

The CMOS technology used in this logic gate offers low power consumption and high noise immunity, making it suitable for battery-powered devices.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy soldering and rework, enhancing ease of assembly and maintenance.

Packing Method: TR

The TR packing method ensures secure transportation and storage of components, reducing the risk of damage during handling.

Terminal Pitch: 0.5 mm

With a small terminal pitch of 0.5mm, this logic gate enables high-density mounting and contributes to compact PCB designs.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage tolerance of 5.5V provides flexibility in system design and ensures compatibility with various power sources.

Technical Specifications

Logic Gates SN74LVC3G34DCURE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.1 ns

Propagation Delay (tpd):

7.9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Trade Compliance

SN74LVC3G34DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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