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SN74LVC2G34YEAR

Texas Instruments

SN74LVC2G34YEAR by Texas Instruments

SN74LVC2G34YEAR by Texas Instruments is a logic gate with 2 functions, 4.1 ns propagation delay at 1.8V, and 50 pF load capacitance. It is used in industrial applications, operates b/w -40 to 85 °C, and has a max supply voltage of 5.5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,290 parts In-Stock

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Digiode

USA . 479 parts In-Stock

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479

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One Stop Electronics

USA . 157 parts In-Stock

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$11.000

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157

$11.000

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AZTECH Wire

Italy . 274 parts In-Stock

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$13.322

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Parana Technologies

USA . 737 parts In-Stock

1+ parts

$14.821

100+ parts

$1,376.370

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$13.339

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737

$14.821

$1,376.370

$13.339

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DigiPath Technology Company

USA . 236 parts In-Stock

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$16.320

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236

$16.320

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ChromeModa Solutions

Germany . 1,259 parts In-Stock

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$16.653

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$13.655

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$16.653

$13.655

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IDEA Electronic Components Group

UK . 994 parts In-Stock

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$16.653

100+ parts

$15.820

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$14.988

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994

$16.653

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$14.988

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Corphita

USA . 2,565 parts In-Stock

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Microchip USA

USA . 143 parts In-Stock

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Overview

Elevate your electronic projects with the SN74LVC2G34YEAR by Texas Instruments, a top-of-the-line logic gate that boasts unmatched quality and reliability. Designed to provide lightning-fast propagation delay and exceptional performance, this product is perfect for a wide range of applications. With Texas Instruments' reputation for excellence in technology, you can trust that this logic gate will deliver precision and efficiency like no other. Invest in the SN74LVC2G34YEAR today and experience the value it brings to your projects.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 4.1 ns

Low propagation delay ensures fast operation and high performance.

No. of Functions: 2

Ability to perform two logical functions in a single package provides efficiency and space saving.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage which can be beneficial for power efficiency and battery-operated devices.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in various environments and conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for reliable performance.

Technical Specifications

Logic Gates SN74LVC2G34YEAR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-XBGA-B6

Length:

1.4 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

BGA6,2X3,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.1 ns

Propagation Delay (tpd):

8.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.5 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

.9 mm

Trade Compliance

SN74LVC2G34YEAR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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