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SN74LVC08AMPWREPG4

Texas Instruments

SN74LVC08AMPWREPG4 by Texas Instruments

SN74LVC08AMPWREPG4 by Texas Instruments is a CMOS Logic Gates IC with 4 functions and 2 inputs. It has a propagation delay of 4.1 ns at 3.3V, suitable for military-grade applications requiring fast signal processing in compact designs. This small-outline package with dual terminals operates b/w -55 to 125°C, making it ideal for harsh environments.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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One Stop Electronics

USA . 1,167 parts In-Stock

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AZTECH Wire

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Parana Technologies

USA . 2,112 parts In-Stock

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DigiPath Technology Company

USA . 1,547 parts In-Stock

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ChromeModa Solutions

Germany . 3,783 parts In-Stock

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IDEA Electronic Components Group

UK . 1,712 parts In-Stock

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Component Stockers USA

USA . 609 parts In-Stock

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$99.990

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Corphita

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the SN74LVC08AMPWREPG4 Logic Gates. This innovative product offers customers a versatile solution for a variety of applications, boasting a fast propagation delay at a nominal supply of 4.1 ns. With a compact design and surface mount capability, this logic gate is perfect for space-constrained projects. Trust in Texas Instruments to deliver cutting-edge technology that enhances performance and efficiency, making the SN74LVC08AMPWREPG4 an essential component for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy is a common and durable material for electronic components, ensuring reliability and longevity of the product.

Propagation Delay At Nominal Supply: 4.1 ns

Low propagation delay ensures fast operation, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount technology allows for easy installation and integration onto circuit boards, saving space and reducing assembly time.

No. of Functions: 4

Having multiple functions in one component reduces the overall component count in a circuit, leading to simpler designs and potentially lower costs.

Nominal Supply Voltage / Vsup (V): 2.7

Operating at a low nominal supply voltage can help minimize power consumption and heat generation in electronic systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand harsh environments and ensure reliability in a wide range of conditions.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of supply voltages, making it suitable for various applications.

Technical Specifications

Logic Gates SN74LVC08AMPWREPG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

4.1 ns

Propagation Delay (tpd):

4.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

2.7

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

SN74LVC08AMPWREPG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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