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SN74LVC04ARGYRG4

Texas Instruments

SN74LVC04ARGYRG4 by Texas Instruments

SN74LVC04ARGYRG4 by Texas Instruments is a CMOS Logic Gates chip with 6 functions, 4.5 ns propagation delay, and 1.8V nominal voltage. It is used in automotive applications due to its low power consumption, high operating temperature range (-40 to 125 °C), and small form factor (3.5mm x 3.5mm).

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

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$0.090

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$0.090

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$0.090

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$0.090

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Digiode

USA . 3,242 parts In-Stock

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Vyrian

USA . 2,584 parts In-Stock

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Bristol Electronics

USA . 22 parts In-Stock

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Microfarads

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AZTECH Wire

Italy . 506 parts In-Stock

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$15.988

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506

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Parana Technologies

USA . 107 parts In-Stock

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$16.229

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$1,507.123

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$14.606

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107

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$1,507.123

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DigiPath Technology Company

USA . 494 parts In-Stock

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$17.870

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$16.441

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$17.870

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ChromeModa Solutions

Germany . 3,048 parts In-Stock

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$18.235

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$14.953

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IDEA Electronic Components Group

UK . 543 parts In-Stock

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$18.235

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$17.323

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$16.412

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One Stop Electronics

USA . 555 parts In-Stock

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Perfect Parts

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Corphita

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Microchip USA

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Overview

Discover the superior quality and reliability of the SN74LVC04ARGYRG4 by Texas Instruments, a leading manufacturer in the industry. This logic gate offers lightning-fast propagation delay, making it ideal for a wide range of applications. Whether you're working on automotive projects or intricate electronic designs, this chip carrier with a very thin profile provides exceptional performance and efficiency. Trust in Texas Instruments to deliver cutting-edge technology that exceeds your expectations. Experience the innovation and value that the SN74LVC04ARGYRG4 brings to your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 4.5 ns

Low propagation delay ensures fast operation of the logic gates, making them suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto printed circuit boards, saving space and time during manufacturing.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low nominal supply voltage, resulting in lower power consumption and efficiency.

Maximum Operating Temperature: 125 °C

High maximum operating temperature makes these logic gates suitable for automotive and industrial applications where elevated temperatures may be present.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making these logic gates reliable and energy-efficient.

Technical Specifications

Logic Gates SN74LVC04ARGYRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-PQCC-N14

JESD-609 Code:

e4

Length:

3.5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

2

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC14/18,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.5 ns

Propagation Delay (tpd):

8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.5 mm

Trade Compliance

SN74LVC04ARGYRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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