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SN74AUP1G57DBVRE4

Texas Instruments

SN74AUP1G57DBVRE4 by Texas Instruments

SN74AUP1G57DBVRE4 by Texas Instruments is a CMOS logic IC with 26.5ns propagation delay, 1.2V nominal voltage, and 3-STATE output characteristics. It is ideal for industrial applications requiring Schmitt Trigger functionality in a small outline package with dual terminals and nickel palladium gold finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,041 parts In-Stock

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8,041

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Digiode

USA . 1,761 parts In-Stock

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1,761

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 895 parts In-Stock

1+ parts

$5.218

100+ parts

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895

$5.218

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Parana Technologies

USA . 342 parts In-Stock

1+ parts

$7.237

100+ parts

-

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$7.740

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342

$7.237

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$7.740

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DigiPath Technology Company

USA . 1,870 parts In-Stock

1+ parts

$7.968

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1,870

$7.968

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One Stop Electronics

USA . 652 parts In-Stock

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$8.000

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652

$8.000

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ChromeModa Solutions

Germany . 5,710 parts In-Stock

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$8.131

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$6.667

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5,710

$8.131

$6.667

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IDEA Electronic Components Group

UK . 1,541 parts In-Stock

1+ parts

$8.131

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$7.318

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1,541

$8.131

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$7.318

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Corphita

USA . 2,741 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of Texas Instruments with the SN74AUP1G57DBVRE4, a versatile Other Function Logic IC designed to deliver exceptional performance in a variety of applications. With a small outline package and low profile design, this IC offers a compact solution for your circuit needs. Benefit from its 3-state output characteristics and Schmitt trigger technology, ensuring optimal signal integrity. Trust in Texas Instruments for innovative solutions that provide value and efficiency to your projects. Elevate your designs with the SN74AUP1G57DBVRE4 and experience the difference of industry-leading technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the IC, ensuring longevity and reliability.

Propagation Delay At Nominal Supply: 26.5 ns

Low propagation delay ensures fast signal processing, making this IC suitable for applications where timing is critical.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and cost during production.

Nominal Supply Voltage / Vsup (V): 1.2

Operates at a low supply voltage of 1.2V, making it energy-efficient and suitable for portable devices.

Output Characteristics: 3-STATE

3-STATE output allows for high impedance state, providing flexibility in circuit design and enabling multi-drop bus systems.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this IC ideal for battery-powered applications and noise-sensitive environments.

Technical Specifications

Other Function Logic ICs SN74AUP1G57DBVRE4 attributes and parameters. Explore more Other Function Logic ICs devices from Texas Instruments

Specs

Family:

AUP/ULP/V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

1.7 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/3.3

Propagation Delay At Nominal Supply:

26.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

SN74AUP1G57DBVRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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