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SN74AUP1G17DBVRG4

Texas Instruments

SN74AUP1G17DBVRG4 by Texas Instruments

SN74AUP1G17DBVRG4 by Texas Instruments is a CMOS logic gate with 19.8 ns propagation delay, suitable for industrial applications. It operates at supply voltages of 1.2V and 3.3V, with a load capacitance of 30pF. This small-outline package has a dual-terminal position and Schmitt trigger functionality, making it ideal for compact electronic designs.

Median Price

$0.319

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 188,650 parts In-Stock

1+ parts

$0.319

100+ parts

$0.216

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$0.111

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188,650

$0.319

$0.216

$0.111

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Digiode

USA . 4,986 parts In-Stock

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$0.303

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4,986

$0.303

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Vyrian

USA . 4,491 parts In-Stock

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4,491

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Corphita

USA . 886 parts In-Stock

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$0.287

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886

$0.287

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AZTECH Wire

Italy . 192 parts In-Stock

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$16.150

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192

$16.150

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Parana Technologies

USA . 371 parts In-Stock

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$20.691

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$20.816

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371

$20.691

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$20.816

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DigiPath Technology Company

USA . 972 parts In-Stock

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$22.783

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972

$22.783

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ChromeModa Solutions

Germany . 2,020 parts In-Stock

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$23.248

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$19.063

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$23.248

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IDEA Electronic Components Group

UK . 1,891 parts In-Stock

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$23.248

100+ parts

$22.086

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$20.923

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1,891

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Microchip USA

USA . 2,603 parts In-Stock

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Perfect Parts

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Overview

Enhance your electronic projects with the SN74AUP1G17DBVRG4 by Texas Instruments, a top-quality logic gate that promises reliable performance and efficiency. Known for their superior manufacturing standards, Texas Instruments delivers cutting-edge technology in a compact package, perfect for applications requiring fast signal processing. With a low power consumption and wide operating temperature range, this logic gate offers exceptional value and versatility for your design needs. Upgrade your circuits today with the SN74AUP1G17DBVRG4 and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that allows for easy handling and installation.

Propagation Delay At Nominal Supply: 19.8 ns

Fast response time ensures efficient signal processing.

Surface Mount: YES

Easily mountable on PCBs for compact and efficient circuit design.

Nominal Supply Voltage / Vsup (V): 1.2

Optimal supply voltage for reliable performance.

Load Capacitance (CL): 30 pF

Suitable for various applications with moderate capacitance requirements.

Power Supplies (V): 1.2/3.3

Compatible with multiple power supply options for versatility.

No. of Terminals: 5

Simplified connection layout for ease of use.

Maximum I (ol): 4 Amp

High output current capacity for driving loads.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with higher temperature ranges.

Minimum Operating Temperature: -40 °C

Operational in extreme temperature conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Corrosion-resistant finish for extended product lifespan.

Maximum Seated Height: 1.45 mm

Low-profile design for space-constrained applications.

Schmitt Trigger: YES

Schmitt trigger functionality for noise immunity and signal conditioning.

Technology: CMOS

Low power consumption and high noise immunity characteristics.

Terminal Pitch: 0.95 mm

Fine pitch for compact layout and PCB footprint.

Maximum Power Supply Current (ICC): 0.0009 mA

Ultra-low power consumption for energy-efficient operation.

Technical Specifications

Logic Gates SN74AUP1G17DBVRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUP/ULP/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/3.3

Maximum Power Supply Current (ICC):

.0009 mA

Propagation Delay At Nominal Supply:

19.8 ns

Propagation Delay (tpd):

19.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74AUP1G17DBVRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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