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SN74AUP1G17DBVRE4

Texas Instruments

SN74AUP1G17DBVRE4 by Texas Instruments

SN74AUP1G17DBVRE4 by Texas Instruments is a CMOS logic gate with 19.8 ns propagation delay, 30 pF load capacitance, and 3-STATE output characteristics. It operates at a supply voltage of 1.2/3.3 V and is ideal for industrial applications requiring Schmitt Trigger functionality in a small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,651 parts In-Stock

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Digiode

USA . 4,242 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 469 parts In-Stock

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$14.620

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469

$14.620

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Parana Technologies

USA . 599 parts In-Stock

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$23.602

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$24.235

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599

$23.602

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DigiPath Technology Company

USA . 790 parts In-Stock

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$25.989

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790

$25.989

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ChromeModa Solutions

Germany . 4,749 parts In-Stock

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$26.519

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$21.746

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4,749

$26.519

$21.746

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IDEA Electronic Components Group

UK . 1,754 parts In-Stock

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$26.519

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$25.193

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$23.867

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1,754

$26.519

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$23.867

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One Stop Electronics

USA . 679 parts In-Stock

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$38.000

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Perfect Parts

USA . 4,619 parts In-Stock

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Microchip USA

USA . 1,523 parts In-Stock

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Corphita

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Overview

Experience seamless performance and reliable functionality with the SN74AUP1G17DBVRE4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality logic gates that are essential for a wide range of applications. This compact and efficient device operates at a nominal supply voltage of 1.2V, offering customers a low-power solution without compromising on performance. With a fast propagation delay and 3-state output characteristics, this logic gate is ideal for industrial-grade applications where precision and efficiency are key. Trust Texas Instruments to provide you with the cutting-edge technology you need to drive innovation and success in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body makes it durable and resistant to damage, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 19.8 ns

With a low propagation delay at nominal supply, this product offers fast and efficient operation in logic gate applications.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on the circuit board.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a nominal supply voltage of 1.2V, this product is energy-efficient and suitable for low power applications.

Output Characteristics: 3-STATE

The 3-state output characteristic allows this product to drive bus lines effectively, providing flexibility in signal routing.

Technology: CMOS

Utilizing CMOS technology, this product offers low power consumption, high noise immunity, and fast switching speeds for reliable logic gate operation.

Technical Specifications

Logic Gates SN74AUP1G17DBVRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUP/ULP/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/3.3

Maximum Power Supply Current (ICC):

.0009 mA

Propagation Delay At Nominal Supply:

19.8 ns

Propagation Delay (tpd):

19.8 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74AUP1G17DBVRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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