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SN74AUP1G04DCKTG4

Texas Instruments

SN74AUP1G04DCKTG4 by Texas Instruments

SN74AUP1G04DCKTG4 by Texas Instruments is a CMOS logic gate with 19ns propagation delay at 1.2V, suitable for industrial applications. It has a max operating temperature of 85°C and can handle a load capacitance of 30pF. This surface-mount device comes in a small outline package with dual terminals.

Median Price

$0.446

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,000 parts In-Stock

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$0.519

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$0.494

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$0.519

$0.494

Verical

USA . 1,000 parts In-Stock

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$0.374

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$0.374

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Chip Stock

USA . 243,040 parts In-Stock

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Digiode

USA . 3,954 parts In-Stock

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Vyrian

USA . 2,946 parts In-Stock

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TME

Poland . 1,000 parts In-Stock

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$0.289

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$0.289

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Distributors (Availability)

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AZTECH Wire

Italy . 118 parts In-Stock

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$9.540

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Parana Technologies

USA . 1,446 parts In-Stock

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$19.058

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$19.111

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$19.058

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DigiPath Technology Company

USA . 1,572 parts In-Stock

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$20.986

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$19.307

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ChromeModa Solutions

Germany . 3,616 parts In-Stock

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$21.414

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$17.559

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IDEA Electronic Components Group

UK . 1,699 parts In-Stock

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$21.414

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$20.343

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$19.273

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$19.273

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Corphita

USA . 2,874 parts In-Stock

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Microchip USA

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Overview

Experience the superior quality and reliability of Texas Instruments with the SN74AUP1G04DCKTG4 logic gate. This versatile component offers fast propagation delays, low power consumption, and a wide operating temperature range, making it ideal for a variety of applications. From industrial automation to consumer electronics, this compact and efficient logic gate provides exceptional performance and value for your design needs. Trust Texas Instruments for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 1.2

The low nominal supply voltage of 1.2V makes the product energy-efficient and suitable for low-power applications.

Propagation Delay At Nominal Supply: 19 ns

The low propagation delay of 19ns ensures fast and efficient operation of the logic gates, making them suitable for high-speed applications.

Surface Mount: YES

Being surface-mountable makes the product easy to install and saves space on the PCB, making it ideal for compact designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C ensures reliable performance even in harsh environments, making the product suitable for industrial applications.

Technical Specifications

Logic Gates SN74AUP1G04DCKTG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUP/ULP/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

19 ns

Propagation Delay (tpd):

19 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74AUP1G04DCKTG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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