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SN74ALVC08RGYRG4

Texas Instruments

SN74ALVC08RGYRG4 by Texas Instruments

SN74ALVC08RGYRG4 by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It operates at a supply voltage of 1.8V, has a propagation delay of 2.9ns, and can handle a load capacitance of 50pF. This chip carrier package is suitable for industrial applications requiring fast signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,954 parts In-Stock

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Digiode

USA . 1,124 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 241 parts In-Stock

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$7.281

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$7.780

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241

$7.281

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$7.780

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DigiPath Technology Company

USA . 2,326 parts In-Stock

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$8.017

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IDEA Electronic Components Group

UK . 2,144 parts In-Stock

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$8.181

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$7.363

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ChromeModa Solutions

Germany . 304 parts In-Stock

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$8.181

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$6.708

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304

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One Stop Electronics

USA . 717 parts In-Stock

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$9.000

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717

$9.000

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AZTECH Wire

Italy . 631 parts In-Stock

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$12.284

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QUARKTWIN TECHNOLOGY LTD

USA . 28,806 parts In-Stock

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Corphita

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Microchip USA

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Overview

Discover the high-quality SN74ALVC08RGYRG4 Logic Gates by Texas Instruments, designed to deliver exceptional performance and reliability. Perfect for a wide range of applications, this product offers customers the advantage of fast propagation delay and low power consumption. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this logic gate will meet your needs with precision and efficiency. Upgrade your electronic projects today with the unmatched value and benefits of the SN74ALVC08RGYRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components due to its insulating properties and durability.

Propagation Delay At Nominal Supply: 2.9 ns

Low propagation delay ensures fast operation and response times in the circuit.

Surface Mount: YES

Surface mount technology allows for compact and efficient circuit designs.

No. of Functions: 4

Having multiple functions in one component reduces the overall complexity and space required for the circuit.

No. of Inputs: 2

Having multiple inputs allows for more flexibility and control in the circuit.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low supply voltage, making it suitable for low power applications.

Load Capacitance (CL): 50 pF

A moderate load capacitance helps in stabilizing the input and output signals.

Power Supplies (V): 3.3

Compatible with common power supply voltages used in electronics.

No. of Terminals: 14

Sufficient terminals for connecting to other components in the circuit.

Maximum I (ol): 24 Amp

High output current capacity allows for driving multiple loads without external buffering.

Propagation Delay (tpd): 5.3 ns

Even with a slightly higher delay, the overall speed of operation is still fast.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, ideal for industrial applications.

Minimum Operating Temperature: -40 °C

Operates reliably in extreme cold conditions as well.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides good contact resistance and corrosion resistance for reliable connections.

Terminal Position: QUAD

Quad terminal layout allows for easier and more efficient PCB design and assembly.

Maximum Seated Height: 1 mm

Low profile design saves space in compact electronic devices.

Width: 3.5 mm

Compact width for fitting into tight spaces on the PCB.

Minimum Supply Voltage (Vsup): 1.65 V

Can operate at even lower voltages if required for specific applications.

Peak Reflow Temperature °C: 260

Can undergo high-temperature reflow soldering processes for assembly.

Length: 3.5 mm

Symmetrical length for uniform placement in the circuit.

Temperature Grade: INDUSTRIAL

Suitable for use in industrial environments with varying temperature conditions.

Technology: CMOS

Uses CMOS technology for low power consumption and high noise immunity.

Terminal Form: NO LEAD

Lead-free terminal form for compliance with environmental regulations.

Packing Method: TR

Tray packaging method ensures secure handling and storage during shipping and handling.

Terminal Pitch: 0.5 mm

Fine terminal pitch for high-density PCB layouts.

Moisture Sensitivity Level (MSL): 2

Moderate moisture sensitivity level for standard manufacturing and storage conditions.

Maximum Supply Voltage (Vsup): 3.6 V

Can tolerate higher supply voltages for improved performance in certain applications.

Maximum Power Supply Current (ICC): 0.01 mA

Low power supply current requirement for energy-efficient operation.

Technical Specifications

Logic Gates SN74ALVC08RGYRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ALVC/VCX/A

JESD-30 Code:

S-PQCC-N14

JESD-609 Code:

e4

Length:

3.5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

2

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC14/18,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

2.9 ns

Propagation Delay (tpd):

5.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.5 mm

Trade Compliance

SN74ALVC08RGYRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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