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SN74AHC1G14DCKTE4

Texas Instruments

SN74AHC1G14DCKTE4 by Texas Instruments

SN74AHC1G14DCKTE4 by Texas Instruments is a CMOS logic gate with 3-STATE output, operating at temperatures from -40 to 125 °C. It has a propagation delay of 18.5 ns and can handle load capacitance up to 50 pF. This Schmitt Trigger IC is ideal for automotive applications due to its small outline package and low power consumption of 0.01 mA.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 238,420 parts In-Stock

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Vyrian

USA . 7,634 parts In-Stock

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Digiode

USA . 4,124 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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One Stop Electronics

USA . 1,046 parts In-Stock

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$3.000

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$3.000

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AZTECH Wire

Italy . 643 parts In-Stock

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$9.609

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Corohmni

South Africa . 318 parts In-Stock

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$14.342

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Ampacity Inc.

Singapore . 973 parts In-Stock

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$15.000

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$16.675

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$15.841

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$15.841

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Parana Technologies

USA . 683 parts In-Stock

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$27.020

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$31.324

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DigiPath Technology Company

USA . 905 parts In-Stock

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$29.753

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$27.373

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ChromeModa Solutions

Germany . 2,064 parts In-Stock

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IDEA Electronic Components Group

UK . 1,577 parts In-Stock

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Semicontronic

India . 373 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,767 parts In-Stock

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Corphita

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Argo Parts USA

USA . 3,514 parts In-Stock

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Microchip USA

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Enhance your electronic projects with the Texas Instruments SN74AHC1G14DCKTE4 Logic Gate. This high-quality component from a trusted manufacturer offers reliable performance and versatility for a wide range of applications. Whether you're working on automotive electronics or industrial automation, this logic gate provides exceptional value with its low power consumption and fast propagation delay. Upgrade your designs with ease and precision using this compact and efficient solution. Trust Texas Instruments to deliver excellence in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, suitable for various applications.

Propagation Delay At Nominal Supply: 12 ns

With a fast propagation delay of 12 ns, this logic gate ensures quick signal processing and low latency in electronic circuits.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V makes this logic gate compatible with a wide range of electronic devices and power sources.

Surface Mount: YES

Being surface mountable, this logic gate is easy to integrate into PCB designs, saving space and simplifying assembly processes.

Power Supplies (V): 2/5.5

Supporting a supply voltage range of 2V to 5.5V, this logic gate offers flexibility in different power supply configurations.

Technical Specifications

Logic Gates SN74AHC1G14DCKTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

18.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74AHC1G14DCKTE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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