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SN65HVD231QDRG4

Texas Instruments

SN65HVD231QDRG4 by Texas Instruments

SN65HVD231QDRG4 by Texas Instruments is a BICMOS interface circuit with 1 Mbps data rate, suitable for automotive applications. It operates at 3.3V and has a max supply current of 0.017 mA, making it ideal for network interfaces in harsh environments. This small outline package with gull wing terminals can withstand temperatures from -40 to 125°C.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,074 parts In-Stock

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6,074

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Chip Stock

USA . 5,610 parts In-Stock

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5,610

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Digiode

USA . 3,659 parts In-Stock

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3,659

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Advanced Electronics

New Zealand . 900 parts In-Stock

1+ parts

$7.379

100+ parts

$7.010

1k+ parts

$7.010

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-

900

$7.379

$7.010

$7.010

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Corohmni

South Africa . 305 parts In-Stock

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$7.714

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305

$7.714

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Parana Technologies

USA . 1,373 parts In-Stock

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$13.055

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$13.548

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1,373

$13.055

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$13.548

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AZTECH Wire

Italy . 453 parts In-Stock

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$13.160

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453

$13.160

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DigiPath Technology Company

USA . 1,505 parts In-Stock

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$14.375

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$13.225

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$14.375

$13.225

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ChromeModa Solutions

Germany . 4,049 parts In-Stock

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$14.668

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$12.028

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$14.668

$12.028

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IDEA Electronic Components Group

UK . 1,269 parts In-Stock

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$14.668

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$13.935

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$13.201

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1,269

$14.668

$13.935

$13.201

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Ampacity Inc.

Singapore . 255 parts In-Stock

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$52.000

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$52.000

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One Stop Electronics

USA . 1,003 parts In-Stock

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$295.000

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$295.000

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Semicontronic

India . 323 parts In-Stock

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$364.000

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$354.900

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$353.080

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323

$364.000

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$353.080

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Kepictronics

USA . 8,500 parts In-Stock

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Continental Prestige Electronics

USA . 6,068 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,206 parts In-Stock

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Corphita

USA . 2,844 parts In-Stock

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Microchip USA

USA . 467 parts In-Stock

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Argo Parts USA

USA . 315 parts In-Stock

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315

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Bastille Electronics

Australia . 300 parts In-Stock

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300

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Overview

Enhance your network interfaces with the SN65HVD231QDRG4 by Texas Instruments. Designed with high-quality materials and cutting-edge BICMOS technology, this interface circuit offers unparalleled reliability and performance in automotive applications. With a compact design and low power consumption, this product provides seamless connectivity and data transfer at 1 Mbps. Trust Texas Instruments to deliver innovative solutions that exceed expectations. Elevate your network capabilities with the SN65HVD231QDRG4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design on PCBs.

Power Supplies (V): 3.3

Operating at a low voltage of 3.3V, this product is energy-efficient and can be powered easily in most systems.

No. of Terminals: 8

Having 8 terminals provides connectivity options and versatility in connecting to other components in a network system.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this product can withstand harsh environmental conditions and extended use.

Technology: BICMOS

Utilizing Bipolar CMOS technology ensures high performance, low power consumption, and compatibility with various applications.

Technical Specifications

Network Interfaces SN65HVD231QDRG4 attributes and parameters. Explore more Network Interfaces devices from Texas Instruments

Specs

Data Rate:

1 Mbps

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

No. of Transceivers:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Network Interfaces

Maximum Supply Current:

.017 mA

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

BICMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN65HVD231QDRG4 Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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