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SN54HC679FK-00

Texas Instruments

SN54HC679FK-00 by Texas Instruments

SN54HC679FK-00 by Texas Instruments is a 12-bit digital arithmetic circuit with CMOS technology. It operates b/w -55 to 125 °C and has a propagation delay of 240 ns. This chip carrier package is suitable for military applications due to its inverted output polarity and ceramic, metal-sealed cofired body material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,108 parts In-Stock

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5,108

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Digiode

USA . 1,980 parts In-Stock

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1,980

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Distributors (Availability)

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Parana Technologies

USA . 1,902 parts In-Stock

1+ parts

$15.884

100+ parts

$1,475.055

1k+ parts

$14.295

10k+ parts

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1,902

$15.884

$1,475.055

$14.295

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AZTECH Wire

Italy . 818 parts In-Stock

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$17.182

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818

$17.182

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DigiPath Technology Company

USA . 357 parts In-Stock

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$17.490

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357

$17.490

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ChromeModa Solutions

Germany . 4,988 parts In-Stock

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$17.847

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$14.635

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4,988

$17.847

$14.635

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IDEA Electronic Components Group

UK . 335 parts In-Stock

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$17.847

100+ parts

$16.955

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$16.062

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335

$17.847

$16.955

$16.062

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One Stop Electronics

USA . 821 parts In-Stock

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$33.000

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821

$33.000

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Corphita

USA . 3,700 parts In-Stock

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Overview

Elevate your digital arithmetic circuits with the SN54HC679FK-00 by Texas Instruments. Trust in the renowned quality and reliability of a leading manufacturer to deliver superior performance in your applications. This chip carrier package boasts 12 bits and a nominal supply voltage of 5V, providing unmatched value and precision. With a wide operating temperature range and innovative CMOS technology, this versatile component is perfect for military-grade projects where speed and accuracy are paramount. Upgrade your circuit designs with the SN54HC679FK-00 and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic, metal-sealed cofired package body material ensures durability and reliability in various operating environments.

No. of Bits: 12

With 12 bits, this digital arithmetic circuit provides high precision in calculations and data processing.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V, this circuit is energy-efficient and compatible with common power sources.

Propgation Delay (tpd): 240 ns

The low propagation delay of 240ns ensures that results are processed quickly and efficiently within the circuit.

Temperature Grade: MILITARY

The military-grade temperature rating allows the circuit to operate reliably in extreme temperature conditions, making it suitable for rugged applications.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making the circuit efficient and reliable.

Technical Specifications

Digital Arithmetic Circuits SN54HC679FK-00 attributes and parameters. Explore more Digital Arithmetic Circuits devices from Texas Instruments

Specs

Additional Features:

WITH INHIBIT

Family:

HC/UH

JESD-30 Code:

S-CQCC-N20

Length:

8.89 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Bits:

12

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Polarity:

INVERTED

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Propagation Delay (tpd):

240 ns

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

8.89 mm

Trade Compliance

SN54HC679FK-00 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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