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SN54HC251J

Texas Instruments

SN54HC251J by Texas Instruments

SN54HC251J by Texas Instruments is an 8-input multiplexer with a propagation delay of 51ns at 5V. It operates in a temperature range of -55 to 125°C, making it suitable for military-grade applications. With a max power supply current of 0.16mA, this CMOS technology device is ideal for high-performance systems.

Median Price

$8.370

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 348 parts In-Stock

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$8.370

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$8.200

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$8.040

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$8.040

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American Microsemiconductor Inc.

USA . 70 parts In-Stock

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$8.340

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Digiode

USA . 3,602 parts In-Stock

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Vyrian

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LIBRA Elektronik GmbH

Germany . 360 parts In-Stock

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Microfarads

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Bristol Electronics

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Corel Iberica Componentes, S.L.

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Atlantic Semiconductor

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ABC Electronics Ltd.

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Mil-Aero Solutions, Inc.

USA . 4 parts In-Stock

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AZTECH Wire

Italy . 530 parts In-Stock

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One Stop Electronics

USA . 343 parts In-Stock

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Parana Technologies

USA . 1,351 parts In-Stock

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$24.862

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$25.546

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DigiPath Technology Company

USA . 869 parts In-Stock

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$27.376

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ChromeModa Solutions

Germany . 6,864 parts In-Stock

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IDEA Electronic Components Group

UK . 2,234 parts In-Stock

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Ampacity Inc.

Singapore . 956 parts In-Stock

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A-Z Elektronik GmbH

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Microchip USA

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Corphita

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Assy Fe

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Overview

Unlock the power of seamless data processing with the SN54HC251J by Texas Instruments. Designed with precision and reliability in mind, this multiplexer-demultiplexer offers unparalleled performance for a wide range of applications. From industrial automation to telecommunications, this versatile component ensures optimal signal routing with minimal delay. Trust Texas Instruments' expertise in semiconductor technology to deliver top-of-the-line solutions that exceed expectations. Upgrade your systems today and experience the efficiency and quality that only the SN54HC251J can provide.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This package material provides durability and protection for the internal components, ensuring reliable performance and long-term use.

Propagation Delay At Nominal Supply: 51 ns

Low propagation delay ensures fast data transmission, making this multiplexer/demultiplexer suitable for high-speed applications.

No. of Inputs: 8

Having 8 inputs allows for versatile connectivity options, accommodating multiple input sources efficiently.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common 5V supply voltage makes integration with other components and systems straightforward.

Output Characteristics: 3-STATE

The 3-STATE output feature provides flexibility in managing signal flow and enables efficient control of output signals.

Technology: CMOS

Being based on CMOS technology, this multiplexer/demultiplexer offers low power consumption and high noise immunity for reliable operation.

Technical Specifications

Multiplexer & Demultiplexer SN54HC251J attributes and parameters. Explore more Multiplexer & Demultiplexer devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

150 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

No. of Bits:

8

No. of Functions:

1

No. of Inputs:

8

No. of Outputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.16 mA

Propagation Delay At Nominal Supply:

51 ns

Propagation Delay (tpd):

450 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Multiplexer/Demultiplexers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SN54HC251J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-319-4631, 5962013194631

NIIN

013194631

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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