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PINA350CDSIDSGR

Texas Instruments

PINA350CDSIDSGR by Texas Instruments

The Texas Instruments PINA350CDSIDSGR is an instrumentation amplifier with a max input offset voltage of 1300uV and nominal voltage of 3.3V. It features a small outline package style, suitable for applications requiring precise signal amplification in tight spaces. With a wide operating temperature range (-40 to 125 °C) and high common mode reject ratio (85dB), it is ideal for industrial sensor interfaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,179 parts In-Stock

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2,179

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Digiode

USA . 681 parts In-Stock

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681

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Nova Conductors

Japan . 65 parts In-Stock

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65

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Distributors (Availability)

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Parana Technologies

USA . 1,453 parts In-Stock

1+ parts

$4.815

100+ parts

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$5.328

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1,453

$4.815

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$5.328

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DigiPath Technology Company

USA . 2,087 parts In-Stock

1+ parts

$5.302

100+ parts

$4.878

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2,087

$5.302

$4.878

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ChromeModa Solutions

Germany . 2,839 parts In-Stock

1+ parts

$5.410

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$4.436

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2,839

$5.410

$4.436

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IDEA Electronic Components Group

UK . 1,512 parts In-Stock

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$5.410

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$4.869

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1,512

$5.410

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$4.869

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One Stop Electronics

USA . 347 parts In-Stock

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$5.410

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347

$5.410

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Ampacity Inc.

Singapore . 492 parts In-Stock

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$6.410

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492

$6.410

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AZTECH Wire

Italy . 274 parts In-Stock

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$6.549

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Corphita

USA . 3,370 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Experience unmatched precision and performance with the PINA350CDSIDSGR by Texas Instruments, a leading manufacturer in the industry. This state-of-the-art instrumentation amplifier delivers superior quality and reliability for a wide range of applications. Whether you're in need of precise measurements or accurate signal amplification, this product offers exceptional value and benefits. Trust Texas Instruments to provide you with top-notch technology that exceeds expectations. Elevate your projects with the PINA350CDSIDSGR today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to external factors, making it a reliable choice for various applications.

Maximum Input Offset Voltage: 1300 uV

With a low maximum input offset voltage, this instrumentation amplifier provides accurate and precise measurements, making it ideal for sensitive applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation, making this amplifier suitable for space-constrained environments.

Package Shape: SQUARE

The square package shape offers a compact design, making it suitable for applications where space is limited.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V, this instrumentation amplifier is energy efficient and suitable for low-power applications.

No. of Terminals: 8

With 8 terminals, this amplifier offers flexibility in connection options, catering to diverse circuit configurations.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile package style enhances thermal performance and reduces size, making it suitable for compact designs.

Maximum Supply Voltage Limit: 6 V

With a maximum supply voltage limit of 6V, this amplifier offers protection against overvoltage conditions, ensuring reliability in operation.

Maximum Operating Temperature: 125 °C

Operating at a maximum temperature of 125°C, this amplifier can withstand high-temperature environments, making it suitable for industrial applications.

Minimum Voltage Gain: 10

The minimum voltage gain of 10 ensures versatility in amplification requirements, making this amplifier suitable for a wide range of signal levels.

Minimum Operating Temperature: -40 °C

Operating at a minimum temperature of -40°C, this amplifier is suitable for use in cold environments or applications with temperature fluctuations.

Terminal Position: DUAL

The dual terminal position allows for easy connectivity and flexibility in circuit layout, making it convenient for various applications.

Maximum Voltage Gain: 50

With a maximum voltage gain of 50, this amplifier offers high amplification capabilities, making it suitable for applications requiring large signal amplification.

Maximum Seated Height: 0.8 mm

The maximum seated height of 0.8mm allows for a low-profile design, making this amplifier suitable for space-constrained applications.

Width: 2 mm

With a width of 2mm, this amplifier offers a compact form factor, making it suitable for applications where space is limited.

Nominal Bandwidth (3dB): 0.1 MHz

The nominal bandwidth of 0.1MHz ensures high-frequency signal processing capabilities, making this amplifier suitable for applications requiring fast response times.

Length: 2 mm

The length of 2mm contributes to the compact design of this amplifier, making it suitable for applications with size constraints.

Minimum Common Mode Reject Ratio: 85 dB

With a minimum common mode reject ratio of 85dB, this amplifier effectively rejects common-mode noise, ensuring accurate signal measurement.

Terminal Form: NO LEAD

The no lead terminal form offers convenience in soldering and assembly, making this amplifier easy to integrate into various circuits.

Amplifier Type: INSTRUMENTATION AMPLIFIER

As an instrumentation amplifier, this product provides high accuracy, stability, and versatility in signal amplification, making it suitable for precision measurement applications.

Maximum Supply Current: 0.135 mA

Operating at a maximum supply current of 0.135mA, this amplifier is energy-efficient, making it suitable for battery-powered applications.

Packing Method: TR

The TR packing method offers protection during transportation and storage, ensuring the amplifier arrives in optimal condition for use.

Nominal Slow Rate: 0.24 V/us

With a nominal slow rate of 0.24V/μs, this amplifier offers smooth and stable signal amplification, making it suitable for applications requiring gradual changes in voltage.

Terminal Pitch: 0.5 mm

The terminal pitch of 0.5mm allows for easy connections and compact layout, making this amplifier suitable for high-density circuit designs.

Nominal Voltage Gain: 50

The nominal voltage gain of 50 provides consistent and reliable signal amplification, making this amplifier suitable for a wide range of applications requiring high gain.

Technical Specifications

Instrumentation Amplifiers PINA350CDSIDSGR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

100 kHz

Nominal Slew Rate:

0.24 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

1.3 mV

Maximum Supply Current:

135 μA

Minimum Voltage Gain:

10

Nominal Voltage Gain:

50

Maximum Voltage Gain:

50

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.079 in (2 mm)

Maximum Seated Height:

0.031 in (0.8 mm)

Total Terminals:

8

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Standards

JESD-30 Code:

S-PDSO-N8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

SOLCC8,.08,20

Trade Compliance

PINA350CDSIDSGR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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