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PINA350ABSIDSGR

Texas Instruments

PINA350ABSIDSGR by Texas Instruments

PINA350ABSIDSGR by Texas Instruments is an instrumentation amplifier with a max input offset voltage of 1300uV and a nominal voltage of 3.3V. It has a small outline package style, suitable for applications requiring high common mode rejection ratio and low bias current, such as precision measurement systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,875 parts In-Stock

1+ parts

-

100+ parts

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6,875

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Digiode

USA . 1,385 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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-

1,385

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,326 parts In-Stock

1+ parts

$5.643

100+ parts

$524.084

1k+ parts

$5.079

10k+ parts

-

1,326

$5.643

$524.084

$5.079

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AZTECH Wire

Italy . 358 parts In-Stock

1+ parts

$6.022

100+ parts

-

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10k+ parts

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358

$6.022

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DigiPath Technology Company

USA . 1,588 parts In-Stock

1+ parts

$6.214

100+ parts

$5.717

1k+ parts

-

10k+ parts

-

1,588

$6.214

$5.717

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ChromeModa Solutions

Germany . 3,131 parts In-Stock

1+ parts

$6.341

100+ parts

$5.200

1k+ parts

-

10k+ parts

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3,131

$6.341

$5.200

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IDEA Electronic Components Group

UK . 1,970 parts In-Stock

1+ parts

$6.341

100+ parts

-

1k+ parts

$5.707

10k+ parts

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1,970

$6.341

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$5.707

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One Stop Electronics

USA . 364 parts In-Stock

1+ parts

$7.410

100+ parts

-

1k+ parts

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10k+ parts

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364

$7.410

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Corphita

USA . 1,670 parts In-Stock

1+ parts

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1,670

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Overview

Discover the PINA350ABSIDSGR by Texas Instruments, a high-quality Instrumentation Amplifier designed to deliver precise and reliable results for your electronic projects. With Texas Instruments' reputation for excellence in manufacturing, this amplifier offers unparalleled performance and durability. Ideal for a wide range of applications, this amplifier provides customers with exceptional value, benefits, and advantages. Enhance your projects with the PINA350ABSIDSGR and experience quality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the components inside, making the product reliable for long-term use.

Maximum Input Offset Voltage: 1300 uV

Low offset voltage ensures accurate and precise measurements, making this product suitable for sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V makes this product energy-efficient and suitable for low-power applications.

Maximum Seated Height: 0.8 mm

With a very thin profile and low seated height, this product is ideal for compact and space-constrained designs.

Nominal Bandwidth (3dB): 0.1 MHz

The wide bandwidth of 0.1 MHz allows for accurate signal processing and fast response times, making this product versatile in various applications.

Nominal Voltage Gain: 20

With a nominal voltage gain of 20, this product provides amplified and reliable output signals, suitable for a range of instrumentation applications.

Technical Specifications

Instrumentation Amplifiers PINA350ABSIDSGR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

100 kHz

Nominal Slew Rate:

0.24 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

1.3 mV

Maximum Bias Current (IIB) @25 °C:

30 pA

Maximum Supply Current:

135 μA

Minimum Voltage Gain:

10

Nominal Voltage Gain:

20

Maximum Voltage Gain:

50

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.079 in (2 mm)

Width:

0.079 in (2 mm)

Maximum Seated Height:

0.031 in (0.8 mm)

Total Terminals:

8

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Standards

JESD-30 Code:

S-PDSO-N8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

SOLCC8,.08,20

Trade Compliance

PINA350ABSIDSGR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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