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PINA350ABSIDDFR

Texas Instruments

PINA350ABSIDDFR by Texas Instruments

PINA350ABSIDDFR by Texas Instruments is an instrumentation amplifier with 1300uV max input offset voltage, 3.3V nominal voltage, and 10 min voltage gain. Ideal for applications requiring high precision amplification in a compact design with a small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,572 parts In-Stock

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5,572

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Digiode

USA . 376 parts In-Stock

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376

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,247 parts In-Stock

1+ parts

$0.653

100+ parts

-

1k+ parts

$1.711

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1,247

$0.653

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$1.711

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DigiPath Technology Company

USA . 959 parts In-Stock

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$0.719

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959

$0.719

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IDEA Electronic Components Group

UK . 1,736 parts In-Stock

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$0.734

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$0.661

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1,736

$0.734

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$0.661

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ChromeModa Solutions

Germany . 732 parts In-Stock

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$0.734

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$0.602

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732

$0.734

$0.602

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One Stop Electronics

USA . 375 parts In-Stock

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$6.410

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375

$6.410

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AZTECH Wire

Italy . 305 parts In-Stock

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$16.747

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305

$16.747

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Corphita

USA . 2,288 parts In-Stock

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Overview

Elevate your instrumentation needs with the Texas Instruments PINA350ABSIDDFR instrumentation amplifier. Crafted with precision and quality in mind, this product offers unparalleled performance for a wide range of applications. From industrial automation to medical devices, this amplifier provides reliable and accurate signal processing. With a compact design and advanced features, the PINA350ABSIDDFR is the perfect solution for your amplification requirements. Experience enhanced functionality and efficiency with this top-notch product from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy body material provides durability and protection for the internal components, making the product suitable for various environments.

Maximum Input Offset Voltage: 1300 uV

Low maximum input offset voltage ensures accurate amplification of input signals with minimal error.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Low nominal supply voltage reduces power consumption and extends battery life in portable applications.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting external components and allows for versatile circuit design.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in harsh industrial environments.

Minimum Common Mode Reject Ratio: 85 dB

High minimum common mode reject ratio ensures that the amplifier effectively rejects common-mode noise for accurate signal amplification.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Being an instrumentation amplifier, this product is designed for precise low-level signal amplification with high accuracy and low noise.

Technical Specifications

Instrumentation Amplifiers PINA350ABSIDDFR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

100 kHz

Nominal Slew Rate:

0.24 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

1.3 mV

Maximum Bias Current (IIB) @25 °C:

30 pA

Maximum Supply Current:

135 μA

Minimum Voltage Gain:

10

Nominal Voltage Gain:

20

Maximum Voltage Gain:

50

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.12

Trade Compliance

PINA350ABSIDDFR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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