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PINA821IDRGR

Texas Instruments

PINA821IDRGR by Texas Instruments

PINA821IDRGR by Texas Instruments is an instrumentation amplifier with a max input offset voltage of 75uV, ideal for automotive applications. It has a nominal voltage of 15V and a max operating temperature of 125°C. With a max voltage gain of 10000, this surface-mount amplifier offers precise signal amplification in compact designs.

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3

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1k+

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Vyrian

USA . 5,223 parts In-Stock

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Digiode

USA . 2,369 parts In-Stock

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Nova Conductors

Japan . 74 parts In-Stock

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Parana Technologies

USA . 77 parts In-Stock

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$1.601

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$148.687

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$1.441

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77

$1.601

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$1.441

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DigiPath Technology Company

USA . 2,293 parts In-Stock

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$1.763

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ChromeModa Solutions

Germany . 1,593 parts In-Stock

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$1.799

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$1.475

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IDEA Electronic Components Group

UK . 1,170 parts In-Stock

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$1.799

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$1.619

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$1.619

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One Stop Electronics

USA . 318 parts In-Stock

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$4.410

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Ampacity Inc.

Singapore . 1,570 parts In-Stock

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$5.410

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Corohmni

South Africa . 163 parts In-Stock

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$5.781

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$6.926

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$6.579

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$6.579

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Semicontronic

India . 1,304 parts In-Stock

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$8.410

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$8.200

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$8.158

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AZTECH Wire

Italy . 408 parts In-Stock

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$15.961

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Corphita

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Argo Parts USA

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Robosynatics

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Lucentia Tech

USA . 2,122 parts In-Stock

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$0.098

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Continental Prestige Electronics

USA . 1,566 parts In-Stock

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Modulus Dynamics

Lithuania . 750 parts In-Stock

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Bastille Electronics

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Overview

Enhance your electronic designs with the high-quality PINA821IDRGR instrumentation amplifier by Texas Instruments. This compact, square-shaped amplifier offers a wide range of applications in automotive and industrial settings. With a maximum input offset voltage of 75uV and minimal bias current, this amplifier ensures precise and accurate measurements. Experience the benefits of a reliable manufacturer, exceptional performance, and versatile applications with the PINA821IDRGR. Elevate your projects with this innovative product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Maximum Input Offset Voltage: 75 uV

Low input offset voltage ensures accuracy in signal processing, making it a reliable choice for precision instrumentation.

Maximum Average Bias Current (IIB): 0.0005 uA

Low bias current minimizes signal distortion, making the product suitable for high-precision measurements.

Surface Mount: YES

Surface mount capability allows for easy installation and integration into electronic circuit boards, saving space and simplifying manufacturing processes.

Nominal Supply Voltage / Vsup (V): 15

Stable supply voltage ensures consistent performance of the amplifier in various operating conditions.

No. of Terminals: 8

Sufficient terminals allow for easy connection and interfacing with other devices, making it versatile for different applications.

Maximum Input Offset Current (IIO): 0.0005 uA

Low input offset current ensures minimal error in signal processing, enhancing the accuracy of measurements.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline and thin profile design with a heat sink ensures efficient heat dissipation and compact size, ideal for space-constrained installations.

Maximum Non Linearity: 0.0015 %

Low non-linearity contributes to accurate signal amplification and minimizes distortion, making it suitable for high-fidelity applications.

Maximum Supply Voltage Limit: 20 V

Wide supply voltage limit provides flexibility in power source selection and enhances compatibility with different systems.

Maximum Operating Temperature: 125 °C

High operating temperature range ensures the amplifier can function reliably in harsh environments, such as automotive or industrial settings.

Minimum Operating Temperature: -40 °C

Wide temperature range allows the amplifier to operate in extreme cold conditions, providing reliability in various environments.

Terminal Position: DUAL

Dual terminal positions enable easy connection and secure attachment of wires, enhancing the product's usability and reliability.

Maximum Voltage Gain: 10000

High voltage gain capability allows for signal amplification without significant distortion, making it suitable for demanding measurement applications.

Maximum Seated Height: 0.8 mm

Low seated height enables compact mounting options, suitable for space-constrained designs or applications with height limitations.

Width: 3 mm

Compact width dimensions facilitate easy integration into circuit board layouts or designs with limited space.

Nominal Bandwidth (3dB): 4.7 MHz

Wide bandwidth ensures signal amplification across a range of frequencies, making the product versatile for various signal processing needs.

Length: 3 mm

Short length dimensions contribute to a compact form factor, suitable for applications where space is limited or a small footprint is required.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating ensures reliable performance in automotive applications subjected to varying temperature conditions.

Maximum Negative Supply Voltage Limit: -20 V

Allows for dual supply voltages with a wide negative voltage limit, providing flexibility in power supply configurations.

Minimum Common Mode Reject Ratio: 140 dB

High common mode rejection ratio minimizes interference from common-mode signals, ensuring accurate measurement of differential signals.

Terminal Form: NO LEAD

No-lead terminal form simplifies soldering and connection processes, enhancing the product's ease of installation and reliability.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Specifically designed for precision signal processing and measurements, offering high accuracy and stability in amplifying differential signals.

Maximum Supply Current: 0.87 mA

Low supply current consumption minimizes power usage and heat generation, ideal for energy-efficient designs or portable applications.

Nominal Negative Supply Voltage (Vsup): -15 V

Stable negative supply voltage ensures proper operation of the amplifier in dual-supply configurations, contributing to signal integrity.

Nominal Slow Rate: 2 V/us

Moderate slow rate allows for controlled voltage changes, reducing the risk of signal distortion and ensuring stable operation of the amplifier.

Terminal Pitch: 0.5 mm

Compact terminal pitch enables close spacing of terminals, facilitating high-density circuit design and integration.

Nominal Voltage Gain: 10

Moderate voltage gain is suitable for various signal amplification applications, providing a balance between amplification and signal fidelity.

Technical Specifications

Instrumentation Amplifiers PINA821IDRGR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

4.7 MHz

Nominal Slew Rate:

2 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

140 dB

Input Offset Voltage Limit:

75 µV

Peak Bias Current:

500 pA

Maximum Supply Current:

870 μA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.0015 %

Maximum Input Offset Current (IIO):

500 pA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.031 in (0.8 mm)

Total Terminals:

8

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-N8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

SOLCC8,.11,20

Trade Compliance

PINA821IDRGR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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