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PINA350CDSIDDFR

Texas Instruments

PINA350CDSIDDFR by Texas Instruments

PINA350CDSIDDFR by Texas Instruments is an instrumentation amplifier with 3.3V supply voltage, 1.1mm seated height, and 50 voltage gain. It is ideal for applications requiring precise signal amplification in a compact form factor, such as medical devices or industrial sensors.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,896 parts In-Stock

1+ parts

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7,896

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Digiode

USA . 2,103 parts In-Stock

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2,103

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 474 parts In-Stock

1+ parts

$0.410

100+ parts

$0.400

1k+ parts

$0.398

10k+ parts

-

474

$0.410

$0.400

$0.398

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Parana Technologies

USA . 2,188 parts In-Stock

1+ parts

$0.636

100+ parts

-

1k+ parts

$1.702

10k+ parts

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2,188

$0.636

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$1.702

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DigiPath Technology Company

USA . 2,334 parts In-Stock

1+ parts

$0.701

100+ parts

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2,334

$0.701

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IDEA Electronic Components Group

UK . 1,847 parts In-Stock

1+ parts

$0.715

100+ parts

-

1k+ parts

$0.644

10k+ parts

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1,847

$0.715

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$0.644

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ChromeModa Solutions

Germany . 473 parts In-Stock

1+ parts

$0.715

100+ parts

$0.586

1k+ parts

-

10k+ parts

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473

$0.715

$0.586

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One Stop Electronics

USA . 1,032 parts In-Stock

1+ parts

$5.410

100+ parts

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1,032

$5.410

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AZTECH Wire

Italy . 194 parts In-Stock

1+ parts

$6.516

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194

$6.516

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Corohmni

South Africa . 378 parts In-Stock

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378

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Corphita

USA . 162 parts In-Stock

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162

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Overview

Experience unmatched precision and reliability with the PINA350CDSIDDFR by Texas Instruments. As a leading manufacturer in instrumentation amplifiers, Texas Instruments delivers top-notch quality and cutting-edge technology. This compact and versatile amplifier is perfect for a wide range of applications, offering customers unparalleled value, performance, and ease of use. Whether you're looking to enhance your audio equipment or improve sensor data acquisition, the PINA350CDSIDDFR is the ideal choice for all your amplification needs. Elevate your projects with Texas Instruments today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and protection for the internal components, making this product suitable for various environmental conditions.

Maximum Input Offset Voltage: 1300 uV

With a low maximum input offset voltage, this instrumentation amplifier can provide accurate output signals even with small input voltages, making it reliable for precision measurement applications.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards, saving space and simplifying the manufacturing process.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V provides compatibility with common power sources, making integration into existing systems straightforward.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this amplifier can withstand elevated temperatures, ensuring reliable performance in challenging thermal environments.

Nominal Bandwidth (3dB): 0.1 MHz

The nominal bandwidth of 0.1 MHz indicates that this amplifier is capable of handling signals within a wide frequency range, making it versatile for various signal processing applications.

Minimum Common Mode Reject Ratio: 85 dB

The high minimum common mode reject ratio of 85 dB ensures efficient rejection of common mode noise, resulting in clean and accurate output signals even in noisy environments.

Maximum Supply Current: 0.135 mA

With a low maximum supply current, this amplifier consumes minimal power, making it energy-efficient and suitable for battery-powered applications.

Technical Specifications

Instrumentation Amplifiers PINA350CDSIDDFR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

100 kHz

Nominal Slew Rate:

0.24 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

85 dB

Input Offset Voltage Limit:

1.3 mV

Maximum Supply Current:

135 μA

Minimum Voltage Gain:

10

Nominal Voltage Gain:

50

Maximum Voltage Gain:

50

Operational Characteristics

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage:

6 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.114 in (2.9 mm)

Width:

0.063 in (1.6 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.12

Trade Compliance

PINA350CDSIDDFR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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